Hannah Masten

University of Michigan

United States

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Articles (6)

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2022

Year:

2021

Collaborators (4)

Jennifer Hite

Professor

University of Florida

UNITED STATES

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Rebecca L. Peterson

UNITED STATES

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Jamie Phillips

Professor and Department Chair

University of Delaware

UNITED STATES

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Andrea Centrone

National Institute of Standards and Technology

UNITED STATES

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Hannah Masten

Research Interests

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Articles (6)

Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

Experimental determination of critical thickness limitations of (010) β -(AlxGa1−x)2O3 heteroepitaxial films

NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

Effects of high temperature annealing on the atomic layer deposited HfO2/β-Ga2O3(010) interface

Charge trapping and recovery in ALD HfO2/β-Ga2O3 (010) MOS capacitors

Collaborators (4)

Jennifer Hite

Rebecca L. Peterson

Jamie Phillips

Andrea Centrone

Make your next move.

Hannah Masten

Research Interests

Explore related searches

Contact this professor

Articles (6)

Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

Experimental determination of critical thickness limitations of (010) β -(AlxGa1−x)2O3 heteroepitaxial films

NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage &gt;7 kV

Effects of high temperature annealing on the atomic layer deposited HfO2/β-Ga2O3(010) interface

Charge trapping and recovery in ALD HfO2/β-Ga2O3 (010) MOS capacitors

Collaborators (4)

Jennifer Hite

Rebecca L. Peterson

Jamie Phillips

Andrea Centrone

Make your next move.

NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV