Hiroki Taniguchi

Antiferroelectric materials have recently received renewed attention due to the increased demand for energy-storage ceramics and power electronics applications. This study demonstrates antiferroelectricity in a titanite-type oxide, SrTiGeO5, through direct observation of a double D-E hysteresis loop by polarization measurements. Temperature dependence of dielectric permittivity shows a cusp around 550 K, indicating a relatively high antiferroelectric phase transition temperature for SrTiGeO5. It is suggested that an electric-field-induced rise of permittivity in SrTiGeO5 has the potential for application in protective circuits of power electronics devices. The present study paves the way for the development of innovative antiferroelectric applications.