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Hisashi Yamada

National Institute of Advanced Industrial Science and Technology (AIST)

Japan

Research Interests

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Professors in Japan

Articles (14)

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2026

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2026

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2025

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2025

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2020

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2020

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2020

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2020

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2020

Collaborators (5)

Reiko Azumi

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Shinsuke Harada

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Toshihide Ide

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Yuya Yamashita

High Frequency and Optical Device Research Group, Core Electronics Technology Research Institute, Department of Electronics and Manufacturing

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Naoto Kumagai

Senior researcher

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Hisashi Yamada

Research Interests

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Articles (14)

Reduction of carbon impurities in GaN grown by MOCVD using an NH3-plasma source

Evaluation of Indium Composition Dependence on Al2O3/InGaN Metal–Insulator–Semiconductor Capacitance

Ringing Noise Reduction Method for High‐Speed GaN Switching Converter

Determination of featured parameters for GaN surface morphologies by using a 2D growth simulation

Modeling and analysis of undoped GaN grown in a horizontal laminar flow MOCVD reactor

Epitaxial growth of 4H-SiC layers on 4H-SiC vicinal off-cut substrates for GaN/SiC hybrid devices

Vertical Conduction of AlGaN-on-SiC Diodes with Buffer-Layer-Free Heterointerfaces

Ammonia-free quasi-atmospheric MOCVD of InN/Al2O3 (0001)

Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods

Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer

Chemical Vapor Deposition Growth of BN Thin Films Using B<inf>2</inf>H<inf>6</inf> and NH<inf>3</inf>

Comparative Study of Boron Precursors for Chemical Vapor-Phase Deposition-Grown Hexagonal Boron Nitride Thin Films

Experimental Demonstration of n- And p-channel GaN-MOSFETs toward Power IC Applications

Growth Temperature Effects of Chemical Vapor Deposition-Grown Boron Nitride Layer Using B<inf>2</inf>H<inf>6</inf> and NH<inf>3</inf>

Collaborators (5)

Reiko Azumi

Shinsuke Harada

Toshihide Ide

Yuya Yamashita

Naoto Kumagai

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