Jaume Segura

University of the Balearic Islands

Spain

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Articles (8)

Year:

2024

Year:

2023

Year:

2023

Year:

2021

Year:

2021

Year:

2020

Year:

2020

Year:

2020

Collaborators (3)

Bartomeu Alorda-Ladaria

University of the Balearic Islands

SPAIN

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Rafel Perello Roig

Associate Professor

Universitat de les Illes Balears

SPAIN

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Sebastià A. Bota

Associate professor

Universitat de les Illes Balears Departament de Física

SPAIN

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Jaume Segura

Research Interests

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Articles (8)

A 164-dBΩ Transimpedance Amplifier for Monolithic CMOS-MEMS Oscillators in Biosensing Applications

Resonant Inertial Mass Sensing for VOCs—CMOS-Compatible SoC Integration Advantages and Challenges: A Review

Resonant Inertial Mass Sensing for VOCs—CMOS-Compatible SoC Integration Advantages and Challenges: A Review

A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

CMOS-MEMS VOC sensors functionalized via inkjet polymer deposition for high-sensitivity acetone detection

Transistor Width Effect on the Power Supply Voltage Dependence of α-SER in CMOS 6T SRAM

Impact of Fluid Flow on CMOS-MEMS Resonators Oriented to Gas Sensing.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment

Collaborators (3)

Bartomeu Alorda-Ladaria

Rafel Perello Roig

Sebastià A. Bota

Make your next move.

Jaume Segura

Research Interests

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Contact this professor

Articles (8)

A 164-dBΩ Transimpedance Amplifier for Monolithic CMOS-MEMS Oscillators in Biosensing Applications

Resonant Inertial Mass Sensing for VOCs—CMOS-Compatible SoC Integration Advantages and Challenges: A Review

Resonant Inertial Mass Sensing for VOCs—CMOS-Compatible SoC Integration Advantages and Challenges: A Review

A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

CMOS-MEMS VOC sensors functionalized via inkjet polymer deposition for high-sensitivity acetone detection

Transistor Width Effect on the Power Supply Voltage Dependence of α-SER in CMOS 6T SRAM

Impact of Fluid Flow on CMOS-MEMS Resonators Oriented to Gas Sensing.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment

Collaborators (3)

Bartomeu Alorda-Ladaria

Rafel Perello Roig

Sebastià A. Bota

Make your next move.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment