Jean-Guy TARTARIN

Full Professor

LASIR

France

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Jean-Guy TARTARIN is a Full Professor at LAAS in France. His research areas encompass wide bandgap semiconductor technologies, with a focus on GaN and AlGaN HEMTs, as well as their applications in mmWave systems. Recent articles highlight his work on the impact of RF stress, device robustness enhancements, and the thermal analysis of advanced transistor architectures.

Articles (6)

Year:

2023

Year:

2023

Year:

2022

Year:

2021

Year:

2020

Year:

2020

Collaborators (1)

Mahmoud ABOU DAHER

Université de Lille

FRANCE

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Jean-Guy TARTARIN

Research Interests

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Articles (6)

Impact of RF stress on different topologies of 100 nm X-band robust GaN LNA

Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications

Evolution Trends and Paradigms of Low Noise Frequency Synthesis and Signal Conversion Using Silicon Technologies

Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer

AlGaN/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology

Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL & HTRB, by random telegraph noise and low frequency noise characterizations

Collaborators (1)

Mahmoud ABOU DAHER

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Jean-Guy TARTARIN

Research Interests

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About

Articles (6)

Impact of RF stress on different topologies of 100 nm X-band robust GaN LNA

Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications

Evolution Trends and Paradigms of Low Noise Frequency Synthesis and Signal Conversion Using Silicon Technologies

Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer

AlGaN/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology

Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL &amp; HTRB, by random telegraph noise and low frequency noise characterizations

Collaborators (1)

Mahmoud ABOU DAHER

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Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL & HTRB, by random telegraph noise and low frequency noise characterizations