Jean-Pierre Landesman

Professor

Université de Rennes 1

France

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Jean-Pierre Landesman is a Professor at Université de Rennes 1, France. His research areas include the mechanical and optical properties of semiconductor materials, particularly focusing on GaAs and InP photonic components. Recent publications highlight his work on strain engineering, chemical imaging, and luminescence properties of various microstructures, employing advanced techniques such as micro-photoluminescence and HR-STEM analysis.

Articles (11)

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2025

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2024

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2023

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2022

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2022

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2021

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2021

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2020

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2020

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2020

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2020

Collaborators (6)

Christophe LEVALLOIS

Associate Professor - Head of the cleanroom group for I. FOTON

Institut National des Sciences Appliquées de Rennes

FRANCE

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Juan Jimenez

Full Professor

Universidad de Valladolid

SPAIN

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Marina Gutiérrez Peinado

Profesor titular de Universidad

Universidad de Cádiz

SPAIN

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Peter Mascher

CANADA

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Daniel Fernández de los Reyes

Universidad de Cádiz

SPAIN

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Paramita Bhattacharyya

Teaching Assistant

McMaster University

CANADA

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Jean-Pierre Landesman

Research Interests

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Articles (11)

Mapping and simulation of processing-induced mechanical strain in GaAs laser diodes

Spatially resolved luminescence properties of etched quantum well microstructures

Mechanical and optical properties of amorphous silicon nitride-based films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Chemical imaging of oxide confinement layers in GaAs/AlxGa1−xAs VCSELs

Strain engineering in III-V photonic components through structuration of SiNx films

Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells

Mechanical strain mapping of GaAs based VCSELs

Analysis by HR-STEM of the Strain Generation in InP after SiNx Deposition and ICP Etching

Mechanical stress in InP and GaAs ridges formed by reactive ion etching

Photoluminescence mapping of the strain induced in InP and GaAs substrates by SiN stripes etched from thin films grown under controlled mechanical stress

Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation

Collaborators (6)

Christophe LEVALLOIS

Juan Jimenez

Marina Gutiérrez Peinado

Peter Mascher

Daniel Fernández de los Reyes

Paramita Bhattacharyya

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