Jin Jang

Distinguished Professor

Kyungpook National University

South Korea

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Jin Jang is a Distinguished Professor at Kyung Hee University in South Korea. His research focuses on advanced materials and device engineering for electronic applications, including ferroelectric thin-film transistors and high-performance semiconductor technologies. Recent publications highlight his work on codoping techniques for improved mobility in zinc oxide transistors and innovations in flexible and low-power electronic devices.

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Collaborators (1)

Jeong-Hwan Lee

Associate Professor

Inha University

SOUTH KOREA

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Jin Jang

Research Interests

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About

Articles (30)

Inducing ferroelectric o-phase in spray-pyrolyzed ZrO2 by La doping for high-performance InGaZnO ferroelectric thin-film transistors

Synergistic Fluorine and Zirconium Codoping for High-Mobility and Bias-Stable ZnO Thin-Film Transistors

Scalable Solution-Processed a-InZnSnO TFTs with UV-O3-Assisted High-k GaZrOx Gate Oxide for Low-Power Electronics

Continuous Grain Growth of High Band Gap InGaO on Crystalline In0.7Ga0.3O for 0.3 µm Channel Length Thin Film Transistors

Flexible Near‐Infrared Photoconductors Based on Donor‐Acceptor Organic Semiconductors

Compact 8-bit Digital-to-Analog Converter Using Low-Temperature Poly-Si Oxide Thin-Film Transistors

Strong Two‐Dimensional Electron Gas at Crystalline and Amorphous InGaSnO Stack Interface for High Performance Transistors with High Temperature Stability

High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N2O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device

Highly Robust Spray‐Pyrolyzed Al2O3 Gate Insulator for Flexible a‐IGZO Thin‐Film Transistors for Low‐Power Displays

Mechanically stable, flexible, and stretchable metal–insulator–semiconductor‐ferroelectric thin‐film transistors for micro‐LED display applications

Low‐Temperature Poly‐Si Thin‐Film Transistor with High‐k ZrAlOx Gate Insulator with SiO2 Blocking Layer

An Ultralow Subthreshold Swing of 28 mV dec–1 in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium–Aluminum Oxide Gate Oxide

Biaxially Stretchable Active‐Matrix Micro‐LED Display with Liquid Metal Interconnects

Generation of InGaZnO Nanoparticle by Ar/O2 Plasma Exposure for Performance Improvement of Oxide TFTs

High quality a-InGaZnO and a-ZrAlO deposited at 375 °C by spray pyrolysis for low voltage operation TFTs

Transistors with ferroelectric ZrXAl1−XOY crystallized by ZnO growth for multi-level memory and neuromorphic computing

Continuous Growth of Crystalline InGaZnO on InLaO by Spray Pyrolysis for High‐Performance Thin‐Film Transistors with Excellent Stability

Large‐Area Growth of Ferroelectric 2D γ‐In2Se3 Semiconductor by Spray Pyrolysis for Next‐Generation Memory

ZrAlOx by Spray Pyrolysis as Gas Barrier for Oxide TFTs on Flexible Substrates

High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics

Multifunctional Crystalline InGaSnO Phototransistor Exhibiting Photosensing and Photosynaptic Behavior Using Oxygen Vacancy Engineering

As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability

Pressure Mapping With Piezoresistive Sensor on Oxide TFTs Backplane

High Performance Amorphous In0.5Ga0.5O Thin‐Film Transistor Embedded with Nanocrystalline In2O3 Dots for Flexible Display Application

Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics

High performance, amorphous InGaZnO thin-film transistors with ferroelectric ZrO2 gate insulator by one step annealing

Artificial Synaptic InGaZnO Thin-Film Transistor With Long Retention Behavior Using Al2O3/SiO2 Gate Insulator

Spray Pyrolyzed Amorphous InGaZnO for High Performance, Self‐Aligned Coplanar Thin‐Film Transistor Backplanes

A Compact DC-DC Converter Using Low-Temperature Poly-Si Oxide Thin-Film Transistors

Emission Gate Driver With Five Low-Temperature Poly-Si Oxide TFTs Without Capacitor for Narrow-Bezel AMOLED Display

Collaborators (1)

Jeong-Hwan Lee

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