Joachim Knoch

Full Professor

RWTH Aachen University

Germany

Research Interests

Explore related searches

Professors in Germany

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

About

Joachim Knoch is a Full Professor at RWTH Aachen University in Germany. His research focuses on advanced semiconductor devices, including nanowire-based quantum dot structures, and the development of innovative materials and techniques for low-power cryogenic transistors. Recent articles highlight his work on microfluidic fabrication methods and the characterization of electronic interfaces in novel sensor technologies.

Articles (13)

Year:

2025

Year:

2025

Year:

2024

Year:

2023

Year:

2023

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2021

Year:

2021

Year:

2021

Year:

2021

Collaborators (4)

Bin Sun

RWTH Aachen University

GERMANY

View details

Xuan Thang Vu

RWTH Aachen University

GERMANY

View details

Lars Schreiber

RWTH Aachen University

GERMANY

View details

Ke Ran

RWTH Aachen University

GERMANY

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Joachim Knoch

Research Interests

Explore related searches

Contact this professor

About

Articles (13)

Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates

Programming layer-by-layer liquid phase epitaxy in microfluidics for realizing two-dimensional metal–organic framework sensor arrays

Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures

Fabrication of Ultrasmall Si Encapsulated in Silicon Dioxide and Silicon Nitride as Alternative to Impurity Doping

Toward Low‐Power Cryogenic Metal‐Oxide Semiconductor Field‐Effect Transistors

Interface Engineering for Steep Slope Cryogenic MOSFETs

Delineating charge and capacitance transduction in system-integrated graphene-based BioFETs used as aptasensors for malaria detection

Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature

Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors

Modeling and Prediction of Hydrogen-Assisted Morphological Evolution in Silicon Utilizing a Level-Set Approach

Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

Role of electron and ion irradiation in a reliable lift-off process with electron beam evaporation and a bilayer PMMA resist system

On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors

Collaborators (4)

Bin Sun

Xuan Thang Vu

Lars Schreiber

Ke Ran

Make your next move.