John Cunningham

We have performed an investigation into the optical conductivity and magnetotransport properties of top-gated devices patterned on the topological insulator Bi 2 Se 3 in order to determine the relative effects of the different carrier species that exist within these novel materials. We find that the topologically protected surfaces within our samples are partially screened from the action of the gate by trivial band-bending states formed at the top surface of the topological insulator. Despite this, the mobility of the topological surface carriers is significantly affected by the application of an external gate bias. Additionally, we find that the optical conductivity response is dominated by the topologically protected surface states, and that the optical conductivity is particularly sensitive to the scattering caused by the topological surfaces coupling to trivial states, arising from the bulk or band-bending induced surface states. These results will have interesting applications to the design of future plasmonic devices that incorporate topological materials.

Surface plasmon polaritons (SPPs) are electromagnetic waves that have attracted significant interest owing to their subwavelength confinement and the strong field enhancement that they provide. Yet in the terahertz (THz) frequency region of the spectrum, which is well below the plasma frequency of metals, these surface waves are characterized by extremely weak confinement that has severely limited their exploitation for information processing and sensing. One means to circumvent this limitation is through subwavelength structuring of a metallic surface, which can thereby be engineered to support the propagation of spoof surface plasmon polaritons (SSPPs) that closely mimic the properties of SPPs. In this work, we report the design and experimental characterization of an ultra-thin metamaterial planar waveguide that supports SSPPs at THz frequencies. Finite-element method simulations are shown to predict the excitation of SSPPs on the surface of our devices under free-space illumination at 3.45 THz. We investigate these structures experimentally using THz scattering-type scanning near-field microscopy (THz-s-SNOM) to map directly the out-of-plane electric field associated with the propagation of SSPPs on the surface of the waveguides. Our work paves the way for the future development of plasmonic integrated circuit technologies and components operating in the THz frequency band.