Joon Young Kwak

We fabricated an indium gallium zinc oxide (IGZO) charge trap flash (CTF) device for logic-in-memory (LIM) applications. Initially, the nonvolatile memory characteristics of the IGZO CTF device were investigated under charge trapping and detrapping states in 104 s retention tests. Next, we constructed a common-source amplifier circuit containing the IGZO CTF device and demonstrated various input–output signal relationships by modulating the memory state of the device. Finally, we used interconnected IGZO CTF devices to demonstrate reconfigurable logic functions. Using series- and parallel-connected IGZO CTF devices, we developed 2-input NAND and 2-input NOR gates, respectively. Our experimental results showed that the IGZO CTF device is a promising future memory device and a tool for LIM technology.