Joonas Hilska

University of Tampere

Finland

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Articles (21)

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2025

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2020

Collaborators (8)

Jussi-Pekka Penttinen

University of Tampere

FINLAND

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Samu-Pekka Ojanen

University of Tampere

FINLAND

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Heidi Johanna Tuorila

University of Tampere

FINLAND

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Teemu Hakkarainen

Tampere University

FINLAND

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Nouman Zia

University of Tampere

FINLAND

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Mircea Guina

University of Tampere

FINLAND

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Markus Peil

Tampere University

FINLAND

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Marcin Motyka

University of Wrocław

POLAND

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Joonas Hilska

Research Interests

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Articles (21)

Broadband continuous-wave GaSb-based superluminescent diodes emitting at 2.1 μm

Fast recovery dynamics of GaSbBi-based SESAMs for high-fluence operation

Micro-Transfer Printing of GaSb Optoelectronics Chips for Mid-Infrared Silicon Photonics Integrated Circuits

Electronic properties of metamorphic GaSbBi films on GaAs

Hybrid integrated GaSb/Si3N4 narrow linewidth (<50 kHz) distributed Bragg reflector laser

Detection of BiGa hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfaces

Low bandgap GaAsNBi solar cells

Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window

Widely Tunable (2.47–2.64 µm) Hybrid Laser Based on GaSb/GaInAsSb Quantum-Wells and a Low-Loss Si<sub>3</sub>N<sub>4</sub> Photonic Integrated Circuit

Widely tunable 2 µm hybrid laser using GaSb semiconductor optical amplifiers and a Si<sub>3</sub>N<sub>4</sub> photonics integrated reflector

Comprehensively analysis of hot electron transport in as-grown and thermally annealed n-type modulation-doped Al0.15Ga0.85As/GaAs0.96Bi0.4 quantum well structure

Discretely Tunable (2594, 2629, 2670 nm) GaSb/Si3N4 Hybrid Laser for Multiwavelength Spectroscopy

Strain-Free GaSb Quantum Dots as Single-Photon Sources in the Telecom S-Band

Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films

Hybrid silicon photonics DBR laser based on flip-chip integration of GaSb amplifiers and µm-scale SOI waveguides

High-Field Electron-Drift Velocity in n-Type Modulation-Doped GaAs0.96Bi0.04 Quantum Well Structure

Highly uniform GaSb quantum dots with indirect-direct bandgap crossover at telecom range

A quantitative analysis of electronic transport in n- and p-type modulation-doped GaAsBi/AlGaAs quantum well structures

Nanohole Etching in AlGaSb with Gallium Droplets

The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires

Raman spectroscopy of GaSb1-xBixalloys with high Bi content

Collaborators (8)

Jussi-Pekka Penttinen

Samu-Pekka Ojanen

Heidi Johanna Tuorila

Teemu Hakkarainen

Nouman Zia

Mircea Guina

Markus Peil

Marcin Motyka

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