Jordi Suñe

Professor

University of Barcelona

Spain

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Jordi Suñe is a Professor at Universitat Autònoma de Barcelona in Spain. His research focuses on memristive devices, particularly their behavior and applications in non-linear transport, stochastic modeling, and energy consumption dynamics. Recent publications include studies on the Programming Trajectory in memristive devices and the simulation of yttrium oxide memristors in artificial neural networks.

Articles (16)

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2025

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2025

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2025

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2024

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2024

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2024

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2023

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2023

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2022

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2022

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2021

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2021

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2021

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2020

Collaborators (8)

Enrique Miranda

Professor

University of Barcelona

SPAIN

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Eszter Piros

Technische Universität Darmstadt

GERMANY

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Francesca Campabadal

Professor of Research

Consejo Superior de Investigaciones Cientificas

SPAIN

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Mª Mercedes Saludes Tapia

Instituto de Microelectrónica de Barcelona

SPAIN

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Lambert Alff

GERMANY

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Samuel Poblador

Instituto de Tecnologías Físicas y de la Información “Leonardo Torres Quevedo”

SPAIN

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Antoni Morell

Associate Professor

University of Barcelona

SPAIN

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Klaus Hofmann

Professor

Technische Universität Darmstadt

GERMANY

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Jordi Suñe

Research Interests

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About

Articles (16)

Behavioral SPICE model for memristive crosspoint arrays operating in the nonlinear transport regime

Stochastic compact model for memory and threshold switching memristors

Analysis of the Voltage Ramp Rate Effects on the Programming Characteristics of Bipolar-Type Memristive Devices

The Role of the Programming Trajectory in the Power Dissipation Dynamics and Energy Consumption of Memristive Devices

Event-Driven Stochastic Compact Model for Resistive Switching Devices

Mesoscopic Theory of Resistive Switching

Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard

SPICE Simulation of Quantum Transport in Al2O3/HfO2-Based Antifuse Memory Cells

Simulation of the effect of material properties on yttrium oxide memristor-based artificial neural networks

Simulation of Bipolar-Type Resistive Switching Devices Using a Recursive Approach to the Dynamic Memdiode Model

Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks

SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices

Assessment and Improvement of the Pattern Recognition Performance of Memdiode-Based Cross-Point Arrays with Randomly Distributed Stuck-at-Faults

Tunability Properties and Compact Modeling of HfO2-Based Complementary Resistive Switches Using a Three-Terminal Subcircuit

A New Perspective Towards the Understanding of the Frequency-Dependent Behavior of Memristive Devices

Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells

Collaborators (8)

Enrique Miranda

Eszter Piros

Francesca Campabadal

Mª Mercedes Saludes Tapia

Lambert Alff

Samuel Poblador

Antoni Morell

Klaus Hofmann

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