José Penuelas

Associate Professor

Institut des nanotechnologies de Lyon

France

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About

José Penuelas is an Associate Professor at the Institut des Nanotechnologies de Lyon in France. His research focuses on nanotechnology, specifically in areas such as atomic force microscopy, thermal degradation of surgical masks, and photocathode efficiency for hydrogen production. His recent publications reflect a commitment to advancing knowledge in material science and nanowire growth techniques.

Articles (14)

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2025

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2024

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2023

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2023

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2023

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2022

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2022

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2022

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2022

Collaborators (6)

Matthieu Bugnet

CNRS

FRANCE

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Paul Verhoeven

Professor (full)

University hospital of Saint Etienne

FRANCE

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Alexander Solntsev

University of Sydney

AUSTRALIA

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Husnu Aslan

Head of Nanometrology Department

Danish Meteorological Institute

DENMARK

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Gilles Patriarche

FRANCE

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Emmanuel Drouard

Associate Professor

Ecole Centrale de Lyon

FRANCE

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José Penuelas

Research Interests

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Articles (14)

Atomic force microscopy as a multimetrological platform for energy devices

Investigating Surgical Mask Thermal Degradation via X‐Ray Techniques for Efficient Reuse

Structure, Morphology, and Surface Chemistry of Surgical Masks and Their Evolution up to 10 Washing Cycles

Growing self-assisted GaAs nanowires up to 80 μm long by molecular beam epitaxy

Growing self-assisted GaAs nanowires up to 80 mu m long by molecular beam epitaxy

Background-Free Near-Infrared Biphoton Emission from Single GaAs Nanowires

Enhanced Light Trapping in GaAs/TiO<sub>2</sub>-Based Photocathodes for Hydrogen Production

Wetting of Ga Droplets in SiO2/Si Cavities: Application to Self-Assisted GaAs Nanowire Growth

A Photoemission Analysis of Gold on Silicon Regarding the Initial Stages of Nanowire Metal-Catalyzed Vapor–Liquid–Solid Growth

A Photoemission Analysis of Gold on Silicon Regarding the Initial Stages of Nanowire Metal-Catalyzed Vapor-Liquid-Solid Growth

Wetting of Ga Droplets in SiO2/Si Cavities: Application to Self- Assisted GaAs Nanowire Growth

Assessing the insulating properties of an ultrathin SrTiO<sub>3</sub> shell grown around GaAs nanowires with molecular beam epitaxy

Assessing the insulating properties of an ultrathin SrTiO3 shell grown around GaAs nanowires with molecular beam epitaxy

Tunable optical anisotropy in epitaxial phase-change VO<sub>2</sub> thin films

Collaborators (6)

Matthieu Bugnet

Paul Verhoeven

Alexander Solntsev

Husnu Aslan

Gilles Patriarche

Emmanuel Drouard

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