Jose Angel Ortiz Gonzalez

Assistant Professor

University of Warwick

United Kingdom

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About

Dr. Jose Angel Ortiz Gonzalez is an Assistant Professor at the University of Warwick, UK. His research focuses on power electronic devices, particularly in the context of silicon carbide (SiC) and gallium nitride (GaN) technologies. Recent articles by Dr. Ortiz Gonzalez delve into areas such as electric vehicle charging systems, surge current management, and the reliability of high-voltage SiC devices.

Articles (14)

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2025

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2020

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2020

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2020

Collaborators (4)

Walid Issa

Associate Professor

Sheffield Hallam University

UNITED KINGDOM

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Saeed Jahdi

Dr.

University of Bristol

UNITED KINGDOM

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Mana Hosseinzadehlish

University of Bristol

UNITED KINGDOM

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Philip Mellor

Professor

University of Bristol

UNITED KINGDOM

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Jose Angel Ortiz Gonzalez

Research Interests

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About

Articles (14)

SiC MOSFET Hybrid Switches With Reverse Conducting IGBTs: Loss and Surge Current Analysis

Rapid Electric Vehicle Charging Based on Silicon Carbide Enabled Medium Voltage DC Transmission Systems

High-Energy Dynamic Avalanche to Failure by Incremental Source-Voltage Increase in Symmetric Double-Trench & Asymmetric Trench SiC MOSFETs

Switching and Frequency Response Assessment of Photovoltaic Drivers and Their Potential for Different Applications

Electrothermal power cycling of 15 kV SiC PiN diodes

Surge current management in Dynamic Reverse Bias reliability testing of WBG devices for automotive application

Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses

Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

Electrothermal power cycling of GaN and SiC cascode devices

Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents from Crosstalk in SiC MOSFETs

Performance and Reliability Review of 650 v and 900 v Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

Performance of SiC cascode JFETs under single and repetitive avalanche pulses

UIS performance and ruggedness of stand-alone and cascode SiC JFETs

Collaborators (4)

Walid Issa

Saeed Jahdi

Mana Hosseinzadehlish

Philip Mellor

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