Kazutoshi Kobayashi

Professor

Kyoto Institute of Technology

Japan

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Professor Kazutoshi Kobayashi is a faculty member at the Kyoto Institute of Technology, Japan. His research focuses on soft-error rates and mitigation techniques in semiconductor devices, including developments in carbon ion radiotherapy applications and power management in SRAM. He has authored several recent articles addressing neutron-induced soft errors and layout optimization for enhanced device resilience.

Articles (10)

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2025

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2024

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2023

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2023

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2023

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2021

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2021

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2020

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2020

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2020

Collaborators (9)

Michihiro Shintani

Associate Professor

Kyoto Institute of Technology

JAPAN

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Masanori Hashimoto

教授 / Professor

Kyoto University

JAPAN

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Makoto SAKAI

JAPAN

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Tatsuya Ohno

Professor

Gunma University

JAPAN

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Hiroshi Sakurai

Professor

Gunma University

JAPAN

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Shigetaka Kumashiro

Research Professor

Kyoto Institute of Technology

JAPAN

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Yukinobu Watanabe

Kyushu University

JAPAN

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Tatsuhiko Sato

Osaka University

JAPAN

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Wang LIAO

University of Tokyo

JAPAN

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Kazutoshi Kobayashi

Research Interests

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About

Articles (10)

A Measurement Method for Neutron-Induced Soft-Error Rates in Terrestrial Applications Using a Clinical Carbon Beam

The Contribution of Secondary Particles Following Carbon Ion Radiotherapy to Soft Errors in CIEDs

A Terrestrial SER Estimation Methodology Based on Simulation Coupled With One-Time Neutron Irradiation Testing

A Three-Level GaN Driver for High False Turn-ON Tolerance With Minimal Reverse Conduction Loss

Disturbance Aware Dynamic Power Reduction in Synchronous 2RW Dual-Port 8T SRAM by Self-Adjusting Wordline Pulse Timing

Intrinsic Vulnerability to Soft Errors and a Mitigation Technique by Layout Optimization on DICE Flip Flops in a 65-nm Bulk Process

Cost-Effective Test Screening Method on 40-nm Embedded SRAMs for Low-Power MCUs

Evaluation of Soft-Error Tolerance by Neutrons and Heavy Ions on Flip Flops With Guard Gates in a 65-nm Thin BOX FDSOI Process

Extracting Voltage Dependence of BTI-induced Degradation Without Temporal Factors by Using BTI-Sensitive and BTI-Insensitive Ring Oscillators

An Efficient and Accurate Time Step Control Method for Power Device Transient Simulation Utilizing Dominant Time Constant Approximation

Collaborators (9)

Michihiro Shintani

Masanori Hashimoto

Makoto SAKAI

Tatsuya Ohno

Hiroshi Sakurai

Shigetaka Kumashiro

Yukinobu Watanabe

Tatsuhiko Sato

Wang LIAO

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