Ke Xu

Assistant Professor

Rochester Institute of Technology

United States

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Dr. Ke Xu is an Assistant Professor at the Rochester Institute of Technology, USA. His research primarily focuses on electric double-layer-gated transistors, particularly in relation to two-dimensional materials and their applications in neuromorphic computing. Recent publications include studies on quantum capacitance, dipole moments in quantum-confined materials, and the effects of gate voltages on carrier density.

Articles (15)

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2025

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2020

Collaborators (5)

Noel Giebink

Professor

University of Michigan–Ann Arbor

UNITED STATES

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Susan K. Fullerton-Shirey

University of Pittsburgh

UNITED STATES

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Rafik Addou

Assistant Professor

University of Texas at Dallas

UNITED STATES

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Benjamin Katz

Pennsylvania State University

UNITED STATES

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Zhongmou Chao

Cornell University

UNITED STATES

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Ke Xu

Research Interests

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About

Articles (15)

Critical Considerations for Observing Cross Quantum Capacitance in Electric-Double-Layer-Gated Transistors Based on Two-Dimensional Crystals

Permanent Dipole Moment in a Quantum-Confined Two-Dimensional Metal Revealed by Electric Double Layer Gating

Ionically gated transistors based on two-dimensional materials for neuromorphic computing

Realizing linear synaptic plasticity in electric double layer-gated transistors for improved predictive accuracy and efficiency in neuromorphic computing

Impact of Large Gate Voltages and Ultrathin Polymer Electrolytes on Carrier Density in Electric-Double-Layer-Gated Two-Dimensional Crystal Transistors

Strain-Induced 2H to 1T′ Phase Transition in Suspended MoTe2 Using Electric Double Layer Gating

Photoluminescence Switching Effect in a Two-Dimensional Atomic Crystal

Single- versus Dual-Ion Conductors for Electric Double Layer Gating: Finite Element Modeling and Hall-Effect Measurements

Modification of the Electronic Transport in Atomically Thin WSe<inf>2</inf> by Oxidation

Electric-double-layer-gated transistors based on two-dimensional crystals: recent approaches and advances

Electric-double-layer-gated transistors based on two-dimensional crystals: recent approaches and advances

Ion-Locking in Solid Polymer Electrolytes for Reconfigurable Gateless Lateral Graphene p-n Junctions

Ion-Locking in Solid Polymer Electrolytes for Reconfigurable Gateless Lateral Graphene p-n Junctions

Tuning transport across MoS<inf>2</inf>/graphene interfaces via as-grown lateral heterostructures

Silver Nanofilament Formation Dynamics in a Polymer-Ionic Liquid Thin Film by Direct Write

Collaborators (5)

Noel Giebink

Susan K. Fullerton-Shirey

Rafik Addou

Benjamin Katz

Zhongmou Chao

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