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annual Promonthly Pro

Kei May Lau

Fang Professor of Engineering, Dept of Electronic & Computer Engineering; Chair Professor, Dept of Electronic & Computer Engineering; Chair Professor, Photonics Technology Center, Dept of Electronic & Computer Engineering; IAS Senior Fellow, HKUST Jockey Club Institute for Advanced Study

The Hong Kong University of Science and Technology

Hong Kong

Research Interests

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Articles (20)

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2023

Collaborators (2)

Andreas Beling

University of Virginia

UNITED STATES

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Xiankai Sun

Professor

The Chinese University of Hong Kong (CUHK)

HONG KONG

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Kei May Lau

Research Interests

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Articles (20)

Observation of avalanche breakdown characteristics in quasi-vertical GaN-on-Si trench MOSFETs

Homoepitaxial GaN-on-GaN trench MOSFETs with 438 MW/cm2 figure of merit and improved gate reliability

Multi-stack InP/GaAsP quantum dot lasers on Si with high characteristic temperature

Origin of threshold voltage instability in vertical GaN trench MOSFETs characterized by charge pumping

Fully Vertical Hexagonal Trench GaN-on-SiC MOSFET Devices

980 nm QW Micro-Lasers With Ultra-Low Threshold

755 nm InP/GaAs0.65P0.35 quantum dot laser with polarization-dependent emission from type-I and type-II band alignments

Fully Etched Low-Back-Reflection and High-Efficiency Silicon Waveguide Grating Couplers With Minimum Feature Size Above 260 nm

Fully-Vertical GaN-on-SiC Trench MOSFETs

Large-area single-crystal indium phosphide laterally grown on patterned silicon-on-insulator

545-mA/mm E-Mode Recessed-Gate GaN MOSHEMT (Vth > 4 V) by Ion Beam Etching

Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric

Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm2

GaN Nanowire n-i-n Diode Enabled High-Performance UV Machine Vision System

Bias-Insensitive GaAsSb/InP CC-MUTC Photodiodes for mmWave Generation up to 325 GHz

Comparison of quantum well structures for room temperature continuous wave 980 nm lasers grown on (001) Si by MOCVD

Small V th Shift and Low Dynamic R on in GaN MOSHEMT With ZrO2 Gate Dielectric

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration

Monolithic integrated all-GaN-based µLED display by selective area regrowth

High coupling efficiency waveguide grating couplers on lithium niobate

Collaborators (2)

Andreas Beling

Xiankai Sun

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