Koichi Fukuda

National Institute of Advanced Industrial Science and Technology (AIST)

Japan

Research Interests

Explore related searches

Professors in Japan

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

Articles (17)

Year:

2025

Year:

2025

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2022

Year:

2022

Year:

2021

Year:

2021

Year:

2021

Year:

2020

Year:

2020

Year:

2020

Collaborators (3)

Yasuyuki Miyamoto

Professor

Tokyo Institute of Technology

JAPAN

View details

Tetsuro Nikuni

Professor

Institute of Science Tokyo

JAPAN

View details

Kimihiko Kato

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Koichi Fukuda

Research Interests

Explore related searches

Contact this professor

Articles (17)

Requirements for localization length and impurity positions in high-temperature quantum dot operations of isoelectronic-trap-assisted tunnel field-effect transistors

Effect of interface trap charge on Coulomb oscillation in MOS-type quantum dots

TCAD analysis of conditions for DIBL parameter misestimation in cryogenic MOSFETs

Integration of buried nanomagnet and silicon spin qubits in a one-dimensional fin structure

Calculation of GaInSb PNP lateral HBT for complementary bipolar logic technology

Effects of Electron Quantum Confinement on Velocity Overshoot in Si Nanosheet Gate-All-Around FETs

Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs

Device structure and fabrication process for silicon spin qubit realizing process-variation-robust SWAP gate operation

Temperature rise effects on static characteristics of complementary FETs with Si and Ge nanosheets

Importance of source and drain extension design in cryogenic MOSFET operation: causes of unexpected threshold voltage increases

Cellular automaton approach for carrier degeneracy effects on the electron mobility of high electron mobility transistors

Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures

A Poisson–Schrodinger and cellular automaton coupled approach for two-dimensional electron gas transport modeling of GaN-based high mobility electron transistors

Technology computer-aided design simulation of phonon heat transport in semiconductor devices

Mechanism of extraordinary gate-length dependence of quantum dot operation in isoelectronic-trap-assisted tunnel FETs

Implementation of Coulomb blockade transport on a semiconductor device simulator and its application to tunnel-FET-based quantum dot devices

Circuit speed oriented device design scheme for GaAsSb/InGaAs double-gate hetero-junction tunnel FETs

Collaborators (3)

Yasuyuki Miyamoto

Tetsuro Nikuni

Kimihiko Kato

Make your next move.