Lisa Porter

Professor

Carnegie Mellon University

United States

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Lisa Porter is a Professor at Carnegie Mellon University in the United States. Her research primarily focuses on the thermal and structural properties of Ga2O3 films, including phase transformations and thermal conductivity. Recent publications highlight her work on the epitaxial growth and characterization of various Ga2O3 polymorphs, as well as the investigation of atomic-scale interfaces in these semiconductors.

Articles (16)

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2025

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2024

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2024

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2024

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2023

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2023

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2023

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2023

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2023

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2022

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2022

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2022

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2021

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2021

Collaborators (3)

Luke Lyle

Assistant Research Professor

Pennsylvania State University

UNITED STATES

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Robert Davis

John R. and Clare Bertucci Distinguished Professor

Carnegie Mellon University

UNITED STATES

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Rachel Kurchin

Assistant Research Professor

Carnegie Mellon University

UNITED STATES

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Lisa Porter

Research Interests

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Articles (16)

Size effects and temperature dependence in the thermal conductivity of γ-Ga2O3 films

Thermal stability and phase transformation of α-, κ(ε)-, and γ-Ga2O3 films under different ambient conditions

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Understanding Phase Stabilization and Transformations in Ga2O3 Wide-Bandgap Semiconductors Through In Situ Transmission Electron Microscopy

(Invited) Epitaxial Growth and Characterization of Ga2O3 Polymorphs

Structural and Chemical Inhomogeneity of Interface Underlying Nonideal Electrical Behavior in Au/β-Ga2O3 Contacts

Mg and Al-induced phase transformation and stabilization of Ga2O3-based γ -phase spinels

Ohmic contact structures on β-Ga2O3 with n+ β-Ga2O3 pulsed laser deposition layers

Effects of Annealing on Co/Au and Ni/Au Schottky Contacts on β-Ga2O3

Evolution of β-Ga2O3 to γ -Ga2O3 solid-solution epitaxial films after high-temperature annealing

(Invited) Epitaxial Growth and Characterization of Ga2O3 Polymorphs

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga<sub>2</sub>O<sub>3</sub> Interface

Layered phase composition and microstructure of κ-Ga2O3-dominant heteroepitaxial films grown via MOCVD

Evidence of thermionic emission in forward biased β-Ga2O3 Schottky diodes at Boltzmann doping limit

Temperature dependence of barrier height inhomogeneity in β-Ga2O3 Schottky barrier diodes

Electrical and chemical analysis of Ti/Au contacts to β-Ga2O3

Collaborators (3)

Luke Lyle

Robert Davis

Rachel Kurchin

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