Marcel Sluiter

Guest Professor

Ghent University

Belgium

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Articles (12)

Incompatibility stress at inclined grain boundaries for cubic crystals under hydrostatic stress and uniaxial stress

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Year:

2024

First - Principles study of hydrogen - Carbide interaction in bcc Fe

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Year:

2024

Continual prune-and-select: class-incremental learning with specialized subnetworks

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Year:

2023

Stresses at grain boundaries: The maximum incompatibility stress in an infinitely extended elastic bicrystal under uniaxial loading

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Year:

2023

A reference-free MEAM potential for α-Fe and γ-Fe

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Year:

2022

A reference-free MEAM potential for α-Fe and γ-Fe

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Year:

2022

Approximation and Characteristic Times in Precipitation Modelling

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Year:

2021

Approximation and characteristic times in precipitation modelling

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Year:

2021

Single-crystal copper films on sapphire

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Year:

2020

Calphad Modeling of LRO and SRO Using ab initio Data

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Year:

2020

Stability, geometry and electronic properties of BH<sub>n</sub> (n = 0 to 3) radicals on the Si{0 0 1}3 × 1:H surface from first-principles

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Year:

2020

Stability, geometry and electronic properties of BHn (n = 0 to 3) radicals on the Si{0 0 1}3 × 1:H surface from first-principles

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Year:

2020

Collaborators (2)

Miguel Bessa

Associate Professor

Brown University

UNITED STATES

Amarante Böttger

Delft University of Technology

NETHERLANDS

Marcel Sluiter

Research Interests

Explore related searches

Contact this professor

Articles (12)

Incompatibility stress at inclined grain boundaries for cubic crystals under hydrostatic stress and uniaxial stress

First - Principles study of hydrogen - Carbide interaction in bcc Fe

Continual prune-and-select: class-incremental learning with specialized subnetworks

Stresses at grain boundaries: The maximum incompatibility stress in an infinitely extended elastic bicrystal under uniaxial loading

A reference-free MEAM potential for α-Fe and γ-Fe

A reference-free MEAM potential for α-Fe and γ-Fe

Approximation and Characteristic Times in Precipitation Modelling

Approximation and characteristic times in precipitation modelling

Single-crystal copper films on sapphire

Calphad Modeling of LRO and SRO Using ab initio Data

Stability, geometry and electronic properties of BH<sub>n</sub> (n = 0 to 3) radicals on the Si{0 0 1}3 × 1:H surface from first-principles

Stability, geometry and electronic properties of BHn (n = 0 to 3) radicals on the Si{0 0 1}3 × 1:H surface from first-principles

Collaborators (2)

Miguel Bessa

Amarante Böttger

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