Marika Schleberger
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Articles (11)
Year:
2024
Year:
2024
Year:
2024
Year:
2024
Year:
2023
Year:
2023
Year:
2023
Year:
2023
Field-effect transistors based on molybdenum disulfide (MoS 2 ) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. Ion irradiation is used to manipulate the hysteresis.
Year:
2023
Year:
2023
Year:
2023
Collaborators (11)
Antonio DI BARTOLOMEO
Full professor
University of Salerno
Stephan Sleziona
Universität Duisburg-Essen
André Schleife
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Günther Prinz
Universität Duisburg-Essen
Yujin Tong
Senior Lecturer
Universität Duisburg-Essen
R. Kramer Campen
Professor
Universität Duisburg-Essen
Axel Lorke
Universität Duisburg-Essen
Eckart Hasselbrink
Universität Duisburg-Essen
Loredana VISCARDI
University of Salerno
Klaus Sokolowski-Tinten
Universität Duisburg-Essen
Aleksi Leino
University of Helsinki
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