Marta Gladysiewicz

This Tutorial provides a comprehensive overview of various k⋅p models used to describe the electronic band structures of semiconductors with cubic diamond and zinc blende symmetries. Our primary focus is on III–V semiconductors, with a particular emphasis on highly mismatched alloys. We begin our exploration with the six-band k⋅p model, which effectively captures interactions within the highest valence bands. Following that, we delve into the intricacies of the eight-band k⋅p model, which takes into account strain effects and modifications to energy dispersion. The Tutorial also introduces the band anticrossing model and its corresponding ten-band k⋅p models, specifically tailored for dilute nitride semiconductors. Furthermore, we extend our discussion to the valence band anticrossing model and its application to the 14-band k⋅p model in the context of dilute bismide materials. Additionally, we emphasize the significance of more comprehensive models, exemplified by the 30-band k⋅p model, for faithfully representing the entire Brillouin zone.