Masataka Higashiwaki

Professor

Osaka University

Japan

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Articles (14)

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2024

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2024

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2023

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2023

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2023

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2023

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2023

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2023

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2023

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2022

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2022

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2022

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2022

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2022

Collaborators (9)

Zhenwei Wang

National Institute of Information and Communications Technology

JAPAN

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Yoshinao Kumagai

Professor

Tokyo University of Agriculture and Technology

JAPAN

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Michael Uren

University of Bristol

UNITED KINGDOM

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Francesco Piva

University of Padua

ITALY

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Yutaka Ohno

Tohoku University

JAPAN

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Gaudenzio Meneghesso

Full Professor

University of Padua

ITALY

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Matthew Smith

Trainer, Researcher

University of Bristol

UNITED KINGDOM

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Andrea Cester

Associate Professor

University of Padova

ITALY

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Ken Goto

Tokyo University of Agriculture and Technology

JAPAN

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Masataka Higashiwaki

Research Interests

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Articles (14)

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Electrical properties of unintentionally doped β-Ga2O3 (010) thin films grown by a low-pressure hot-wall metalorganic chemical vapor deposition

Thermodynamic analysis of molecular beam epitaxy of group-III sesquioxides

Thermodynamic analysis of β-Ga2O3 growth by molecular beam epitaxy

Modelling of impedance dispersion in lateral β-Ga2O3 MOSFETs due to parallel conductive Si-accumulation layer

Crystallinity degradation and defect development in (AlxGa1−x)2O3 thin films with increased Al composition

Electrical properties and energy band alignments of p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding

Extraction of Sub-Threshold Mobility in Ga2O3 Lateral Transistors From AC Conductance

Suppression of Drain Current Leakage and Short-Channel Effect in Lateral Ga2O3 RF MOSFETs Using (Al x Ga1-x )2O3 Back-Barrier

Effect of substrate orientation on homoepitaxial growth of β -Ga2O3 by halide vapor phase epitaxy

Wide bandgap semiconductor materials and devices

Fabrication of β-Ga2O3/Si heterointerface and characterization of interfacial structures for high-power device applications

Vertical β-Ga2O3 Schottky barrier diodes with trench staircase field plate

Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties

Collaborators (9)

Zhenwei Wang

Yoshinao Kumagai

Michael Uren

Francesco Piva

Yutaka Ohno

Gaudenzio Meneghesso

Matthew Smith

Andrea Cester

Ken Goto

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