Mathias Rommel

Germany

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Articles (28)

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2025

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2023

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2022

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2022

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2022

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2021

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2021

Collaborators (8)

Guoqi Zhang

chair professor

Delft University of Technology

NETHERLANDS

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Luigi Di Benedetto

Associate Professor

University of Salerno

ITALY

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David Quirion

Head

Instituto de Microelectrónica de Barcelona

SPAIN

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Susanne Beuer

Fraunhofer Institute for Integrated Systems and Device Technology

GERMANY

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Sten Vollebregt

Associate Professor

Delft University of Technology

NETHERLANDS

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Gian Domenico Licciardo

Associate Professor

University of Salerno

ITALY

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ROSALBA LIGUORI

University of Salerno

ITALY

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Vojislav Krstic

Assistant Professor (tenured position)

Trinity College Dublin

IRELAND

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Mathias Rommel

Research Interests

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Articles (28)

Analysis of a 4H-SiC Lateral PMOSFET Temperature Sensor Between 14 K–482 K

Modeling the partially detected backside reflectance of transparent substrates in reflectance microspectroscopy

Performance Investigation of 4H-SiC PIN Photodiodes With Dual-Emitter Designs for Enhanced UV-C Detection

Formation of Structured Low-Ohmic p-Type Contacts on Al-Implanted 4H-SiC by Laser Annealing

Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA Processing on Gate Oxide Lifetime

Spectro‐Spatial Unmixing in Optical Microspectroscopy for Thickness Determination of Layered Materials

An analog to digital converter in a SiC CMOS technology for high-temperature applications

Anisotropic stress observation of 4H‐SiC trench metal‐oxide semiconductor field‐effect transistor test structures by scanning near‐field optical Raman microscope

Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device

Device Modeling of 4H-SiC PIN Photodiodes with Shallow Implanted Al Emitters for VUV Sensor Applications

Empirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal Budget

Low-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density Optimization

Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD

Improvement of Reflectance Spectroscopy for Oxide Layers on 4H-SiC

Temperature Dependence of 4H-SiC Gate Oxide Breakdown and <i>C</i>-<i>V</i> Properties from Room Temperature to 500 °C

A 4H-SiC CMOS SPICE Level 3 Model for Circuit Simulations

A 4H-SiC NMOSFET-based temperature sensor operating between 14K and 481K

Analysis and Design of an SiC CMOS Three-Channel DC-DC Synchronous Buck Converter for High-Temperature Applications

Intragranular thermal fatigue of Cu thin films: Near-grain boundary hardening, strain localization and voiding

Correlating Optical Microspectroscopy with 4×4 Transfer Matrix Modeling for Characterizing Birefringent Van der Waals Materials

Threshold Voltage Adjustment on 4H-SiC MOSFETs Using P-Doped Polysilicon as a Gate Material

On the interpretation of confocal spectral depth profiling of color center and carrier concentration by photoluminescence and Raman of implanted 4H–SiC

Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC

CMOS compatible manufacturing of a hybrid SET-FET circuit

A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium

Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer

Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC

MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing

Collaborators (8)

Guoqi Zhang

Luigi Di Benedetto

David Quirion

Susanne Beuer

Sten Vollebregt

Gian Domenico Licciardo

ROSALBA LIGUORI

Vojislav Krstic

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