The Institute of High Pressure Physics, Polish Academy of Sciences, invites applications for a Junior Postdoctoral Researcher (JPR) position focused on computational and technology-oriented development of GaN-based diode structures. This role is part of the Center for Nitride Semiconductor Physics and Technology “GaN-Unipress” project, funded by the Foundation for Polish Science and co-financed by the European Union. The project aims to advance gallium nitride (GaN) materials and devices for power electronics and quantum applications, integrating bulk GaN crystal growth, advanced epitaxial techniques, ion implantation, and AI/ML-supported process optimization.

The successful candidate will work at the interface of advanced computational modeling and semiconductor technology development. Responsibilities include the design and simulation of p–n, p–i–n, and Schottky diode structures using TCAD tools, modeling doping profiles, carrier transport, defect-related recombination, and device behavior under various operating conditions. The researcher will develop physically sound models that incorporate realistic growth and process-related phenomena, refining them based on experimental feedback. Collaboration with experimental teams working on MOCVD, HVPE, MBE, ion implantation, and ultra-high-pressure annealing is expected, requiring a solid understanding of epitaxial processes and defect formation mechanisms.

Applicants should have a strong grasp of semiconductor processing workflows, including metallization, contact optimization, and photolithography, to enable realistic TCAD device modeling. While direct cleanroom experience is advantageous, awareness of fabrication-induced effects relevant to device performance is essential. The position also involves participation in structural, optical, and electrical characterization of materials and devices, and quantitative correlation of experimental results with computational predictions. Close interaction between modeling and experimental data analysis is a key component of the research.

The JPR will contribute to scientific publications, presentations at international conferences, collaborative research projects, and supervision of students. The project is organized into four work packages: growth and processing of high-quality GaN substrates, development of GaN-based power diodes, rare-earth-doped GaN structures for quantum applications, and data-driven optimization of materials growth and device fabrication processes. The overarching goal is to advance scientific understanding and deliver validated device structures ready for industrial implementation.

Applicants must hold a PhD in Physics, Materials Science, Computational Materials Science, Electrical Engineering, or a closely related discipline, obtained not earlier than 7 years before the application deadline. A publication record in peer-reviewed journals, research experience in semiconductor materials and/or computational modeling, and proficiency with advanced computational packages are required. Additional qualifications such as cleanroom experience, knowledge of Polish, granted patents, participation in international conferences, and certificates in relevant training are considered advantageous. All application documents must be submitted in English and PDF format.

The position offers a net salary of 8,800–11,600 PLN/month, with a contract until 31 December 2029. The research environment is highly collaborative, with opportunities for professional development and engagement in cutting-edge semiconductor research. For further information, visit http://unipress.waw.pl or see the full position details at Euraxess.