Naoka NAGAMURA

University of Tokyo

Japan

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Articles (13)

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2025

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2024

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2024

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2023

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2023

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2022

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2022

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2022

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2021

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2021

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2021

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2020

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2020

Collaborators (8)

Kosuke NAGASHIO

University of Tokyo

JAPAN

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Takatoshi Yamada

National Institute of Advanced Industrial Science and Technology

JAPAN

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Yuma Iwasaki

National Institute for Materials Science

JAPAN

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Toshitaka Kubo

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Mitsuhiro Okada

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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WENXIONG ZHANG

The Univeristy of Tokyo

JAPAN

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Masato Kotsugi

University of Tokyo

JAPAN

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Anh Khoa Augustin Lu

National Institute for Materials Science

JAPAN

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Naoka NAGAMURA

Research Interests

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Articles (13)

Plasma treatment of MoS<sub>2</sub> field-effect transistors using solid-state fluorine source

Introduction for “EMPeaks”, High-throughput Spectrum Analysis Assisted by Machine Learning

Maximum a posteriori estimation for high-throughput peak fitting in X-ray photoelectron spectroscopy

Effect of carrier doping on the electronic states of earth-abundant Fe–Al–Si thermoelectric materials

High-throughput XPS spectrum modeling with autonomous background subtraction for 3<i>d</i><sub>5/2</sub> peak mapping of SnS

Skill-Agnostic analysis of reflection high-energy electron diffraction patterns for Si(111) surface superstructures using machine learning

Photoelectron spectromicroscopy analysis of graphene during gate-controlled photo-oxidation process

Facet-dependent electrochemical performance and electronic structure of LiCoO<sub>2</sub> polyhedral particles revealed by microscopic resonant X-ray photoelectron spectroscopy

Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping

Nano-scale Surface and Interface Analysis Using X-ray Spectromicroscopy Assisted by Measurement Informatics

Spectrum adapted expectation-conditional maximization algorithm for extending high–throughput peak separation method in XPS analysis

All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality

Micrometer-scale monolayer SnS growth by physical vapor deposition

Collaborators (8)

Kosuke NAGASHIO

Takatoshi Yamada

Yuma Iwasaki

Toshitaka Kubo

Mitsuhiro Okada

WENXIONG ZHANG

Masato Kotsugi

Anh Khoa Augustin Lu

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