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Paul Berger

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University of Tampere

Finland

Research Interests

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Professors in Finland

Recent Grants

Grant: Close

EAGER Collaborative: >100 GHz Optical Clocking using Self-Modulation of Co-Tunneling Light Emitters

Open Date: 2018-09-01

Close Date: 2020-02-29

Grant: Close

Simultaneous High-Speed Electronic and Photonic Characterization of GaN Resonant-Tunneling Structures

Open Date: 2018-06-01

Close Date: 2019-05-31

Grant: Close

Collaborative Proposal: RTD-based Relaxation Oscillators (RTD-RO) to Increase Output Power and Overcome DC Stability Issues

Open Date: 2017-07-15

Close Date: 2020-06-30

Grant: Close

Collaborative Proposal: RTD-based Relaxation Oscillators (RTD-RO) to Increase Output Power and Overcome DC Stability Issues

Open Date: 2017-07-15

Close Date: 2020-06-30

Grant: Close

Devices and Architectures for Terahertz Electronics

Open Date: 2016-06-02

Close Date:

Articles (19)

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Collaborators (8)

Matin Forouzmehr

University of Tampere

FINLAND

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Jari Keskinen

Staff Scientist

University of Tampere

FINLAND

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Ketra A. Schmitt

Concordia University

CANADA

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Hamed Pourkheirollah

University of Tampere

FINLAND

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Guoan Wang

University of South Carolina

UNITED STATES

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Katina Michael

Professor, MBA (Technology and Digital Strategy) Program Director

Arizona State University

UNITED STATES

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Amit Tewari

IAS Senior Research Fellow

University of Tampere

FINLAND

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Matti Mäntysalo

Professor at Tampere University

University of Tampere

FINLAND

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Paul Berger

Research Interests

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Recent Grants

Articles (19)

Bringing Attention to the Growing Social Impact of Biomedical Devices

Optimization of High‐κ HfO2 Transistor Dielectrics by Atomic Layer Deposition as an Enabler of Novel Thin‐Film Circuits and Sensors

Influence of In Situ Atomic Layer Annealing and Plasma-Enhanced Atomic Layer Deposition Techniques for Low-Temperature Deposition of HfO2 High-κ Gate Dielectrics

Interfacial engineering of conformal titanium oxide nanofilms on porous carbon supercapacitor electrodes via atomic layer deposition

Charge-storage evolution of TiO2 ALD-coated AC flexible supercapacitors over long-term cycling

Direct PEALD Deposition of a HfO2 Gate Dielectric without the Passivation for TFTs on Rigid and Flexible Substrates

Experimental demonstration of plasmon–plasmon scattering paves the way for electromagnetic wave-based digital logic concept

Influence of Microwave and Magnetic Fields on the Electrophysical Parameters of a Tunnel Diode

Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes

Editorial to the Last Issue of the Second Year of IEEE Journal on Flexible Electronics

Editorial to the First Issue of the Second Year

Flexible, solution-processed, indium oxide (In2O3) thin film transistors (TFT) and circuits for internet-of-things (IoT)

Flexible, solution-processed, indium oxide (In2O3) thin film transistors (TFT) and circuits for internet-of-things (IoT)

Electroluminescence in Unipolar-Doped In0.53Ga0.47As/AlAs Resonant-Tunneling Diodes: A Competition between Interband Tunneling and Impact Ionization

Electroluminescence in Unipolar-Doped In0.53Ga0.47As/AlAs Resonant-Tunneling Diodes: A Competition between Interband Tunneling and Impact Ionization

Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures

Foreword Special Issue on Low-Temperature Processing of Electronic Materials for Cutting Edge Devices

Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical mask

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

Collaborators (8)

Matin Forouzmehr

Jari Keskinen

Ketra A. Schmitt

Hamed Pourkheirollah

Guoan Wang

Katina Michael

Amit Tewari

Matti Mäntysalo

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