Pavel Salev

Assistant professor

University of Denver

United States

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About

Dr. Pavel Salev is an Assistant Professor at the University of Denver in the United States. His research focuses on advanced materials and their electrical and optical properties, particularly in the context of phase-change materials and neuromorphic devices. Recent publications include studies on structural microscopy, optical mapping, and the electrical control of magnetic resonance in vanadium oxide and manganite materials.

Articles (23)

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2022

Collaborators (6)

Dip Das

University College London

UNITED KINGDOM

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Yayoi Takamura

UNITED STATES

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Alex Frano

Associate Professor

University of California, San Diego

UNITED STATES

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Ivan K. Schuller

UNITED STATES

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Erica W. Carlson

150th Anniversary Professor

Purdue University

UNITED STATES

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Henry Navarro

Associate Professor

Andrews University

UNITED STATES

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Pavel Salev

Research Interests

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About

Articles (23)

Laser-induced selective local patterning of vanadium oxide phases

Optical Mapping and On-Demand Selection of Local Hysteresis Properties in VO2

High-Resolution Full-Field Structural Microscopy of the Voltage-Induced Filament Formation in VO2-Based Neuromorphic Devices

Electrical Control of Magnetic Resonance in Phase Change Materials

Local strain inhomogeneities during electrical triggering of a metal–insulator transition revealed by X-ray microscopy

Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Voltage-induced magnetic domain evolution in a phase-change material

Low-temperature paramagnetic phase reentrance in praseodymium-doped manganites

Positive and Negative Pressure Regimes in Anisotropically Strained V2O3 Films

Resistive switching localization by selective focused ion beam irradiation

Deep learning Hamiltonians from disordered image data in quantum materials

Stochasticity in the synchronization of strongly coupled spiking oscillators

Voltage-controlled magnetic anisotropy enabled by resistive switching

Voltage-controlled magnetic anisotropy enabled by resistive switching

Magnetoresistance anomaly during the electrical triggering of a metal-insulator transition

Spatially Distributed Ramp Reversal Memory in VO2

Stochastic transition in synchronized spiking nanooscillators

Integration of Ag-CBRAM crossbars and Mott ReLU neurons for efficient implementation of deep neural networks in hardware

Current‐Driven Switching of Néel Vector of an Antiferromagnetic Insulator Thin Film

Stress-tailoring magnetic anisotropy of V2O3/Ni bilayers

Tuning Spin‐Orbit Torques Across the Phase Transition in VO2/NiFe Heterostructure

Exponential Escape Rate of Filamentary Incubation in Mott Spiking Neurons

Generation of Tunable Stochastic Sequences Using the Insulator–Metal Transition

Collaborators (6)

Dip Das

Yayoi Takamura

Alex Frano

Ivan K. Schuller

Erica W. Carlson

Henry Navarro

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