Peter Gammon

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Associate Professor

University of Warwick

United Kingdom

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Peter Gammon is an Associate Professor at the University of Warwick, UK. His research focuses on silicon carbide (SiC) power devices, particularly in the context of high-voltage applications and device optimization. Recent articles by Professor Gammon explore topics such as cost-effective design of MOSFET devices, trench etch processing for Schottky diodes, and the impact of growth techniques on device performance.

Recent Grants

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Silicon-Silicon Carbide (Si/SiC) Power Devices for high temperature, hostile environment applications

Open Date: 2015-12-01

Close Date: 2017-11-30

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Collaborators (4)

Vishal Shah

Associate Professor

University of Warwick

UNITED KINGDOM

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Paul Evans

Associate Professor

University of Nottingham

UNITED KINGDOM

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Philip A. Mawby

University of Warwick

UNITED KINGDOM

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Neophytos Lophitis

Assistant Professor in Electrical Power Electronics

University of Nottingham

UNITED KINGDOM

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Peter Gammon

Research Interests

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About

Recent Grants

Articles (24)

Prospects and Challenges for SiC Power Devices in MMC-VSC-HVDC Applications

Cost-Effective Design and Optimization of a 3300-V Semi-Superjunction 4H-SiC MOSFET Device

Trench Etch Processing for SiC Superjunction Schottky Diodes

Improved Angle Tolerance in 4H-SiC Trench Filling Epitaxy Using Chlorinated Chemistry

On the Characterization of 4H-SiC PiN Diodes and JFETs for their Use in High-Voltage Bidirectional Power Devices

Designs of 1.2 kV Rated Semi-Superjunction MOSFET on the 2D and 3D Planes for Practical Realization

A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations

Epitaxial trench refill of 4H-SiC by chlorinated chemistry

Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride

Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications

Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry

High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode

The First Optimisation of a 16 kV 4H-SiC N-Type IGCT

Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs

3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance

Auxetic piezoelectric effect in heterostructures

Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement

Thermal characterization of direct wafer bonded Si-on-SiC

Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

A Compact Trench-Assisted Space-Modulated JTE Design for High-Voltage 4H-SiC Devices

Optimization of 1700-V 4H-SiC Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability

The improvement of Mo/4H-SiC Schottky diodes via a P<inf>2</inf>O<inf>5</inf> surface passivation treatment

Collaborators (4)

Vishal Shah

Paul Evans

Philip A. Mawby

Neophytos Lophitis

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