Piotr Martyniuk

Associate Professor

Military University of Technology in Warsaw

Poland

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About

Dr. Piotr Martyniuk is an Associate Professor at the Military University of Technology in Warsaw, Poland. His research focuses on the performance of avalanche photodiodes, particularly in the context of long-wavelength and mid-wave infrared applications. Notable recent works include studies on defect levels in type-II superlattices and the impact of multiplication layers in two-dimensional materials. He actively publishes on topics related to infrared detection properties and device optimization for thermoelectric cooling.

Articles (20)

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2025

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2022

Collaborators (8)

Paweł Madejczyk

Military University of Technology in Warsaw

POLAND

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Jarosław Pawluczyk

Assistant Professor

Military University of Technology in Warsaw

POLAND

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Malwina Liszewska

Military University of Technology

POLAND

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Kacper Grodecki

Military University of Technology in Warsaw

POLAND

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Bartłomiej Seredyński

assistant professor

Military University of Technology in Warsaw

POLAND

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Jaroslaw Rutkowski

Military University of Technology in Warsaw

POLAND

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Antoni Rogalski

Professor

Military University of Technology in Warsaw

POLAND

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Kinga Majkowycz

Military University of Technology in Warsaw

POLAND

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Piotr Martyniuk

Research Interests

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Articles (20)

Influence of the multiplication layer on the long-wavelength InAsSb avalanche photodiodes performance

Passivation of MWIR Heterostructure p-InAsSbP/n-InAs Photodiodes Using SiO<sub>2</sub> Layers for Near-Room-Temperature Operation

Defect levels in InAs/InAsSb type-II superlattice for LWIR cascade detectors

MWIR/LWIR ICIPs – The utmost performance under thermoelectric cooling (200 K)

Room‐Temperature WSe<sub>2</sub> Impact Ionization Field‐Effect Transistor Based on a Stepwise Homojunction

Avalanche Multiplication in Two-Dimensional Layered Materials: Principles and Applications

Effect of Multiplication and Charge Layers on the Gain in InGaAsSb/AlGaAs Avalanche Photodiodes at Room Temperature

Response time of the type-II superlattice InAs/InAsSb mid-infrared interband cascade photodetector for HOT conditions

Analysis of InAs/InAsSb Superlattice Miniband Positions for a Cascade LWIR Detector

Unraveling the Infrared Detection Properties of Bi2Te3 Depending on Thickness from Semiconductor to Metal Surface States

Infrared avalanche photodiodes from bulk to 2D materials

Infrared HOT Photodetectors: Status and Outlook

Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared detectors

MCT heterostructures for higher operating temperature infrared detectors designed in Poland

Raman scattering of low energy HgCdTe phonons

The performance of the ICIP Ga-free superlattice longwave infrared photodetector for high operating temperature

Van der Waals two-color infrared detection

Determination of the Strain Influence on the InAs/InAsSb Type-II Superlattice Effective Masses

Demonstration of the Longwave Type-II Superlattice InAs/InAsSb Cascade Photodetector for High Operating Temperature

Demonstration of the Longwave Type-II Superlattice InAs/InAsSb Cascade Photodetector for High Operating Temperature

Collaborators (8)

Paweł Madejczyk

Jarosław Pawluczyk

Malwina Liszewska

Kacper Grodecki

Bartłomiej Seredyński

Jaroslaw Rutkowski

Antoni Rogalski

Kinga Majkowycz

Make your next move.

Piotr Martyniuk

Research Interests

Explore related searches

Contact this professor

About

Articles (20)

Influence of the multiplication layer on the long-wavelength InAsSb avalanche photodiodes performance

Passivation of MWIR Heterostructure p-InAsSbP/n-InAs Photodiodes Using SiO<sub>2</sub> Layers for Near-Room-Temperature Operation

Defect levels in InAs/InAsSb type-II superlattice for LWIR cascade detectors

MWIR/LWIR ICIPs – The utmost performance under thermoelectric cooling (200 K)

Room‐Temperature WSe<sub>2</sub> Impact Ionization Field‐Effect Transistor Based on a Stepwise Homojunction

Avalanche Multiplication in Two-Dimensional Layered Materials: Principles and Applications

Effect of Multiplication and Charge Layers on the Gain in InGaAsSb/AlGaAs Avalanche Photodiodes at Room Temperature

Response time of the type-II superlattice InAs/InAsSb mid-infrared interband cascade photodetector for HOT conditions

Analysis of InAs/InAsSb Superlattice Miniband Positions for a Cascade LWIR Detector

Unraveling the Infrared Detection Properties of Bi2Te3 Depending on Thickness from Semiconductor to Metal Surface States

Infrared avalanche photodiodes from bulk to 2D materials

Infrared HOT Photodetectors: Status and Outlook

Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared detectors

MCT heterostructures for higher operating temperature infrared detectors designed in Poland

Raman scattering of low energy HgCdTe phonons

The performance of the ICIP Ga-free superlattice longwave infrared photodetector for high operating temperature

Van der Waals two-color infrared detection

Determination of the Strain Influence on the InAs/InAsSb Type-II Superlattice Effective Masses

Demonstration of the Longwave Type-II Superlattice InAs/InAsSb Cascade Photodetector for High Operating Temperature

Demonstration of the Longwave Type-II Superlattice InAs/InAsSb Cascade Photodetector for High Operating Temperature

Collaborators (8)

Paweł Madejczyk

Jarosław Pawluczyk

Malwina Liszewska

Kacper Grodecki

Bartłomiej Seredyński

Jaroslaw Rutkowski

Antoni Rogalski

Kinga Majkowycz

Make your next move.

MWIR/LWIR ICIPs – The utmost performance under thermoelectric cooling (200 K)