Piotr Wiśniewski

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University of Warsaw

Poland

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Recent Grants

Grant: Close

Photonics Integrated Circuits technologies for MIDIR

Open Date: 2021-04-01

Close Date: 2024-03-01

Grant: Close

Study of the interband tunneling phenomenon between low dimensional carrier gases in tunnel field-effect transistor

Open Date: 2019-07-01

Close Date: 2022-07-01

Grant: Close

Center for Terahertz Research and Applications (CENTERA)

Open Date: 2019-01-01

Close Date:

Articles (12)

Year:

2025

Year:

2025

Year:

2025

Year:

2023

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2021

Year:

2021

Year:

2020

Collaborators (4)

Andrzej Kaźmierczak

Assistant Professor

University of Warsaw

POLAND

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Andrzej Mazurak

University of Warsaw

POLAND

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Bogdan Majkusiak

Prof.

University of Warsaw

POLAND

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Krzysztof Anders

University of Warsaw

POLAND

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Piotr Wiśniewski

Research Interests

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Contact this professor

Recent Grants

Articles (12)

Study of RRAM devices with PECVD silicon-oxide resistive switching layer

Analysis of charge-trapping effects in ultra-low current metal–oxide–semiconductor–oxide–semiconductor devices

Innovative, satellite-independent, and self-supplied position sensor

Study of silicon-oxide RRAM devices based on complex impedance spectroscopy

Passive Photonic Integrated Circuits Elements Fabricated on a Silicon Nitride Platform

Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices

Charge-Trapping-Induced Hysteresis Effects in Highly Doped Silicon Metal–Oxide–Semiconductor Structures

Modeling of InAs/Si Electron-Hole Bilayer Tunnel Field Effect Transistor

Technology of sub-micrometer MIM tunnel diodes

Investigation of Electrical Properties of the Al/SiO<sub>2</sub>/n<sup>++</sup>-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements

Theoretical Study of Current-Voltage Characteristics of Electron-Hole Bilayer Tunnel Field Effect Transistors of Different Channel Semiconductors

Modeling the Current–Voltage Characteristics of Ge₁₋ₓSnₓ Electron–Hole Bilayer TFET With Various Compositions

Collaborators (4)

Andrzej Kaźmierczak

Andrzej Mazurak

Bogdan Majkusiak

Krzysztof Anders

Make your next move.

Piotr Wiśniewski

Research Interests

Explore related searches

Contact this professor

Recent Grants

Articles (12)

Study of RRAM devices with PECVD silicon-oxide resistive switching layer

Analysis of charge-trapping effects in ultra-low current metal–oxide–semiconductor–oxide–semiconductor devices

Innovative, satellite-independent, and self-supplied position sensor

Study of silicon-oxide RRAM devices based on complex impedance spectroscopy

Passive Photonic Integrated Circuits Elements Fabricated on a Silicon Nitride Platform

Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices

Charge-Trapping-Induced Hysteresis Effects in Highly Doped Silicon Metal&ndash;Oxide&ndash;Semiconductor Structures

Modeling of InAs/Si Electron-Hole Bilayer Tunnel Field Effect Transistor

Technology of sub-micrometer MIM tunnel diodes

Investigation of Electrical Properties of the Al/SiO<sub>2</sub>/n<sup>++</sup>-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements

Theoretical Study of Current-Voltage Characteristics of Electron-Hole Bilayer Tunnel Field Effect Transistors of Different Channel Semiconductors

Modeling the Current–Voltage Characteristics of Ge₁₋ₓSnₓ Electron–Hole Bilayer TFET With Various Compositions

Collaborators (4)

Andrzej Kaźmierczak

Andrzej Mazurak

Bogdan Majkusiak

Krzysztof Anders

Make your next move.

Charge-Trapping-Induced Hysteresis Effects in Highly Doped Silicon Metal–Oxide–Semiconductor Structures