Roberto Bergamaschini

Assistant Professor

University of Milano-Bicocca

Italy

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Roberto Bergamaschini is an Assistant Professor at the University of Milano-Bicocca in Italy. His research focuses on materials science, particularly in interface energies, microstructure evolution, and nanostructure growth, as evidenced by his recent publications. He has explored topics such as thermodynamic consistency in neural networks, light trapping in silicon microcrystals, and phase-field modeling of growth processes.

Articles (19)

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2025

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2020

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2020

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2020

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2020

Collaborators (7)

Yizhen Ren

Netherlands Organisation for Applied Scientific Research

NETHERLANDS

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Leo Miglio

University of Milano-Bicocca

ITALY

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Marcel Verheijen

NETHERLANDS

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Emilio Scalise

Assistant Professor

University of Milano-Bicocca

ITALY

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Damon Carrad

Københavns Universitet

DENMARK

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Francesco Montalenti

Professor

University of Milano-Bicocca

ITALY

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Stefano Sanguinetti

Full Professor

University of Milano-Bicocca

ITALY

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Roberto Bergamaschini

Research Interests

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About

Articles (19)

Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained

Near‐Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals

Accelerating simulations of strained-film growth by deep learning: Finite element method accuracy over long time scales

Extreme time extrapolation capabilities and thermodynamic consistency of physics-inspired neural networks for the 3D microstructure evolution of materials via Cahn–Hilliard flow

In‐Plane Nanowire Growth of Topological Crystalline Insulator Pb1 − xSnxTe

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty

Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects

Growth of thick [111]-oriented 3C-SiC films on T-shaped Si micropillars

Semiconductor Heteroepitaxy

Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments

Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP–Si–SiGe nanowires by controlled faceting

Growth of thick [111]-oriented 3C-SiC films on T-shaped Si micropillars

Semiconductor Heteroepitaxy

Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A

Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study

Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates

Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires

Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study

Collaborators (7)

Yizhen Ren

Leo Miglio

Marcel Verheijen

Emilio Scalise

Damon Carrad

Francesco Montalenti

Stefano Sanguinetti

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