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Sami Alghamdi

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Professor (Associate)

king abdulaziz university

Saudi Arabia

Research Interests

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Recent Grants

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Thermal Management of The Ga2O3 Based Semiconductors and Power Devices

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A nonlocal system for the identification of active vibration response of chiral double walled CNTs

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Articles (13)

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2026

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2026

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2025

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2025

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2025

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2025

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2025

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2025

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2024

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2024

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2024

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2023

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2023

Collaborators (1)

Sultan Alghamdi

Assistant Professor

king abdulaziz university

SAUDI ARABIA

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ApplyKite TwinLearns as you apply

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Sami Alghamdi

Research Interests

Make your next move.

Recent Grants

Articles (13)

Hybrid machine learning and deep learning framework for multi-stage fault diagnosis in modern power systems

BV > 3 kV and Low Turn-On Voltage β-Ga2O3 Vertical Schottky Barrier Diodes With PIN Edge Termination

High-performance β -Ga2O3 vertical diodes integrating metal-interlayer-semiconductor architecture and mesa termination

C-Band β-Ga₂O₃-on-SiC RF Power MOSFETs With High Output Power Density and Low Microwave Noise Figure

1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study

Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies

Proposal and Simulation of β-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage

Statistical Study of Large-Area Schottky Barrier Diodes Fabricated on 2-in β-Ga2O3 Wafer Using Au-Free Processes

Dynamic load reference based DQ-axis synchronous frame control method of grid connected PV hybrid microgrid

Rice Husk-Derived P-doped CNTs on Cu–ZnO/NPC as a Binder-Free electrodes for aqueous supercapacitors and oxygen evolution

Synergistic multi-functional N-doped carbon Nanocage@CNT/ZnMn2O4/Ti3C2 MXene: Powering battery, supercapacitor, and catalyzing hydrogen evolution

β-Ga₂O₃ Lateral Schottky Barrier Diodes With > 10 kV Breakdown Voltage and Anode Engineering

Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing

Collaborators (1)

Sultan Alghamdi

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