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Shengman Li

Assistant Professor

National University of Singapore (NUS)

Singapore

Research Interests

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Articles (16)

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2026

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2024

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2024

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2023

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2023

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2023

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2023

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2023

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2023

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2023

Collaborators (1)

WAJID ALI

Assistant Professor

University of Warsaw

POLAND

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Shengman Li

Research Interests

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Articles (16)

Quantum-Well Oxide Semiconductor Transistors Overcome Mobility–VT Trade-Off

Controlled growth of vertically stacked In<sub>2</sub>Se<sub>3</sub>/WSe<sub>2</sub> heterostructures for ultrahigh responsivity photodetector

Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI vision system

High Performance Transistor of Aligned Carbon Nanotubes in a Nanosheet Structure

Hybrid 2T nMOS/pMOS Gain Cell Memory with Indium-Tin-Oxide and Carbon Nanotube MOSFETs for Counteracting Capacitive Coupling

Iso-performance N-type and P-type MOSFETs on densely aligned CNT array enabled by self-aligned extension doping with barrier booster

Planar Cation Passivation on Colloidal Quantum Dots Enables High-Performance 0.35–1.8 µm Broadband TFT Imager

Small Molecule Additives to Suppress Bundling in Dimensional-Limited Self-Alignment Method for High-Density Aligned Carbon Nanotube Array

Multifunctional Optoelectronic Synapses Based on Arrayed MoS<sub>2</sub> Monolayers Emulating Human Association Memory

Barrier Booster for Remote Extension Doping and its DTCO for 1D & 2D FETs

Building high performance transistors on carbon nanotube channel

Co-designed Capacitive Coupling-Immune Sensing Scheme for Indium-Tin-Oxide (ITO) 2T Gain Cell Operating at Positive Voltage Below 2 V

High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/µm at V<sub>DS</sub> of 0.75 V by self-aligned doping in sub-20 nm spacer

N3XT 3D Technology Foundations and Their Lab-to-Fab: Omni 3D Logic, Logic+Memory Ultra-Dense 3D, 3D Thermal Scaffolding

Reconfigurable Artificial Synapse Based on Ambipolar Floating Gate Memory

Vapor growth of V-doped MoS<sub>2</sub> monolayers with enhanced B-exciton emission and broad spectral response

Collaborators (1)

WAJID ALI

Make your next move.

Shengman Li

Research Interests

Make your next move.

Articles (16)

Quantum-Well Oxide Semiconductor Transistors Overcome Mobility–VT Trade-Off

Controlled growth of vertically stacked In<sub>2</sub>Se<sub>3</sub>/WSe<sub>2</sub> heterostructures for ultrahigh responsivity photodetector

Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI vision system

High Performance Transistor of Aligned Carbon Nanotubes in a Nanosheet Structure

Hybrid 2T nMOS/pMOS Gain Cell Memory with Indium-Tin-Oxide and Carbon Nanotube MOSFETs for Counteracting Capacitive Coupling

Iso-performance N-type and P-type MOSFETs on densely aligned CNT array enabled by self-aligned extension doping with barrier booster

Planar Cation Passivation on Colloidal Quantum Dots Enables High-Performance 0.35–1.8 µm Broadband TFT Imager

Small Molecule Additives to Suppress Bundling in Dimensional-Limited Self-Alignment Method for High-Density Aligned Carbon Nanotube Array

Multifunctional Optoelectronic Synapses Based on Arrayed MoS<sub>2</sub> Monolayers Emulating Human Association Memory

Barrier Booster for Remote Extension Doping and its DTCO for 1D &amp; 2D FETs

Building high performance transistors on carbon nanotube channel

Co-designed Capacitive Coupling-Immune Sensing Scheme for Indium-Tin-Oxide (ITO) 2T Gain Cell Operating at Positive Voltage Below 2 V

High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/µm at V<sub>DS</sub> of 0.75 V by self-aligned doping in sub-20 nm spacer

N3XT 3D Technology Foundations and Their Lab-to-Fab: Omni 3D Logic, Logic+Memory Ultra-Dense 3D, 3D Thermal Scaffolding

Reconfigurable Artificial Synapse Based on Ambipolar Floating Gate Memory

Vapor growth of V-doped MoS<sub>2</sub> monolayers with enhanced B-exciton emission and broad spectral response

Collaborators (1)

WAJID ALI

Make your next move.

Barrier Booster for Remote Extension Doping and its DTCO for 1D & 2D FETs