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Shu Yang

University of Science and Technology of China

Research Interests

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Articles (20)

Collaborators (2)

Xiao Yang

European Organization for Nuclear Research

Guangwei Xu

University of Science and Technology of China

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Shu Yang

Research Interests

Make your next move.

Explore related searches

Articles (20)

Collaborators (2)

Xiao Yang

Guangwei Xu

Make your next move.

Shu Yang

Research Interests

Make your next move.

Explore related searches

Articles (20)

Fast Switching Quasi-Inversion-Channel β-Ga2O3 UMOSFET

Mitigating the Dominance of Channel Resistance in β-Ga2O3 UMOSFETs via Cell Pitch Scaling

Over 2 GW/cm2 Low Leakage Vertical β-Ga2O3 Schottky Barrier Diode With Multizone JTE via Self-Aligned NiO/β-Ga2O3 Co-Etching

Reliability Enhancement of a 2.2 kV β-Ga2O3 Schottky Barrier Diode With Junction Termination Extension Under High-Temperature Storage Stress

Vertical GaN Trench MOSFET at Cryogenic Temperatures: Interface Engineering and Physics-Based Modeling

Low V on β -Ga₂O₃ Schottky Diodes With Synergistic Suppression of Bulk and Perimeter Leakage

Demonstration of Al X Ga1−X N Solar-Blind UV Phototransistor With Double Heterostructures and Winding Gate

kV-Class Vertical GaN PiN Diode Under Proton Irradiation: Impact on Conductivity Modulation

An Efficient Switching Transient Analytical Model for P-GaN Gate HEMTs With Dynamic C G(V DS, V GS)

AlGaN/GaN Double-Channel Ultraviolet Photodetector With Polarization-Enhanced Photoresponsivity

Impact of Structural Variation in SiC MOSFETs on TSEP Performances for Temperature Estimation

Time-/Current-Dependent Surge Current Capability of Fully-Vertical GaN-on-GaN PiN Diode With Conductivity Modulation

Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs

Vertical β-Ga2O3 Power Transistors: Fundamentals, Designs, and Opportunities

Vertical β-Ga₂O₃ Power Diodes: From Interface Engineering to Edge Termination

Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension

Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga2O3 power diodes

Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain

Investigation of conductivity modulation in vertical GaN-on-GaN PiN diode under high current density

Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure

Collaborators (2)

Xiao Yang

Guangwei Xu

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