Shubhra Pasayat

Assistant Professor

University of Wisconsin-Madison

United States

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Shubhra Pasayat is an Assistant Professor at the University of Wisconsin-Madison, USA. Her research focuses on advanced semiconductor materials and devices, specifically in the areas of high-electron-mobility transistors (HEMTs) and ultraviolet light-emitting diodes. Recent articles include studies on the transport properties of ultra-wide bandgap AlGaN, thermal degradation characteristics of GaN RF HEMTs, and high-voltage AlGaN/GaN monolithic structures.

Articles (22)

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2020

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Stacia Keller

University of California, Santa Barbara

UNITED STATES

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Shubhra Pasayat

Research Interests

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Articles (22)

Demonstration of high Johnson’s figure of merit (f<sub>t</sub> × V<sub>BR</sub> > 20 THz·V) and f<sub>max</sub> × V<sub>BR</sub> (> 42 THz·V) for Al<sub>0.66</sub>Ga<sub>0.34</sub>N channel MISHEMT on bulk AlN substrates

Characteristics of transport properties in ultra-wide bandgap Al0.65Ga0.35N channel HEMTs with low contact resistance and high breakdown voltage (&gt;2.5 kV)

>2.7 kV Al0.65Ga0.35N Channel HEMT on bulk AlN substrate with >400MW/cm2 Baliga Figure of Merit

Thermal Degradation Characteristics of GaN RF HEMT With Ni/Au T-Gate (L G ~ 150 nm)

Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy

0.86 kV p-Si/(001)-Ga2O3 Heterojunction Diode

High-Voltage (>1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 mΩ ⋅ cm2)

Demonstration of Si-doped Al-rich regrown Al(Ga)N films on AlN/sapphire with >1015/cm3 carrier concentration using CCS-MOCVD reactor

Demonstration of Effective Intrinsic Electron Velocity >107 cm/s in Ultrawide Bandgap Al₀.₆₄Ga₀.₃₆N Channel HEMTs

MOCVD of InGaN on ScAlMgO<sub>4</sub> on Al<sub>2</sub>O<sub>3</sub> Substrates with Improved Surface Morphology and Crystallinity

MOCVD grown ultraviolet microlight-emitting diodes with an InGaN/GaN/AlGaN active region design

First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD

Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)

Study of Pore Geometry and Dislocations in Porous GaN Based Pseudo-Substrates Using TEM

Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate

Vertical GaN and Vertical Ga <sub>2</sub> O <sub>3</sub> Power Transistors: Status and Challenges

Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐ to the Micrometer Scale

Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films

Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films

Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays

Color-tunable <10 μ m square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates

Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN

Collaborators (1)

Stacia Keller

Make your next move.

Shubhra Pasayat

Research Interests

Explore related searches

Contact this professor

About

Articles (22)

Demonstration of high Johnson’s figure of merit (f<sub>t</sub> × V<sub>BR</sub> &gt; 20 THz·V) and f<sub>max</sub> × V<sub>BR</sub> (&gt; 42 THz·V) for Al<sub>0.66</sub>Ga<sub>0.34</sub>N channel MISHEMT on bulk AlN substrates

Characteristics of transport properties in ultra-wide bandgap Al0.65Ga0.35N channel HEMTs with low contact resistance and high breakdown voltage (&amp;gt;2.5 kV)

>2.7 kV Al0.65Ga0.35N Channel HEMT on bulk AlN substrate with >400MW/cm2 Baliga Figure of Merit

Thermal Degradation Characteristics of GaN RF HEMT With Ni/Au T-Gate (L G ~ 150 nm)

Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy

0.86 kV p-Si/(001)-Ga2O3 Heterojunction Diode

High-Voltage (>1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 mΩ ⋅ cm2)

Demonstration of Si-doped Al-rich regrown Al(Ga)N films on AlN/sapphire with &gt;1015/cm3 carrier concentration using CCS-MOCVD reactor

Demonstration of Effective Intrinsic Electron Velocity >107 cm/s in Ultrawide Bandgap Al₀.₆₄Ga₀.₃₆N Channel HEMTs

MOCVD of InGaN on ScAlMgO<sub>4</sub> on Al<sub>2</sub>O<sub>3</sub> Substrates with Improved Surface Morphology and Crystallinity

MOCVD grown ultraviolet microlight-emitting diodes with an InGaN/GaN/AlGaN active region design

First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD

Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)

Study of Pore Geometry and Dislocations in Porous GaN Based Pseudo-Substrates Using TEM

Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate

Vertical GaN and Vertical Ga <sub>2</sub> O <sub>3</sub> Power Transistors: Status and Challenges

Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐ to the Micrometer Scale

Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films

Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films

Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays

Color-tunable &lt;10 μ m square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates

Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN

Collaborators (1)

Stacia Keller

Make your next move.

Demonstration of high Johnson’s figure of merit (f<sub>t</sub> × V<sub>BR</sub> > 20 THz·V) and f<sub>max</sub> × V<sub>BR</sub> (> 42 THz·V) for Al<sub>0.66</sub>Ga<sub>0.34</sub>N channel MISHEMT on bulk AlN substrates

Characteristics of transport properties in ultra-wide bandgap Al0.65Ga0.35N channel HEMTs with low contact resistance and high breakdown voltage (>2.5 kV)

Demonstration of Si-doped Al-rich regrown Al(Ga)N films on AlN/sapphire with >1015/cm3 carrier concentration using CCS-MOCVD reactor

Color-tunable <10 μ m square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates