simoen eddy

Guest Professor

Ghent University

Belgium

Research Interests

Explore related searches

Professors in Belgium

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

About

Dr. Simoen Eddy is a Guest Professor at Ghent University, Belgium. His research focuses on advanced semiconductor devices, particularly in the areas of low-frequency noise characterization, parameter extraction strategies, and the analysis of mobility fluctuations in MOSFETs and nanosheet FETs. Recent publications include investigations into the performance of AlGaN/GaN transistors and their electrical parameters under varying conditions.

Articles (14)

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2022

Year:

2022

Year:

2022

Collaborators (1)

Nadine Collaert

Vrije Universiteit Brussel

BELGIUM

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

simoen eddy

Research Interests

Explore related searches

Contact this professor

About

Articles (14)

Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation

Refined Analysis of the Correlated Carrier Number and Mobility Fluctuations Mechanism in MOSFETs

Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications

Experimental study of MISHEMT from 450 K down to 200 K for analog applications

MISHEMT intrinsic voltage gain under multiple channel output characteristics

3D backside integration of FinFETs: Is there an impact on LF noise?

Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

Refined DC and Low-Frequency Noise Characterization at Room and Cryogenic Temperatures of Vertically Stacked Silicon Nanosheet FETs

RTS Noise Characterization of Trap Properties in InGaAs nFinFETs

Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?

Novel Y-function based strategy for parameter extraction in S/D asymmetric architecture devices and low frequency noise characterization in GAA Si VNW pMOSFETs

NH3 PDA Temperature-Impact on Low-Frequency Noise Behavior of Si0.7Ge0.3 pFinFETs

Lifetime Assessment of InxGa1−xAs n‐Type Hetero‐Epitaxial Layers

Impact of the channel doping on the low-frequency noise of silicon vertical nanowire pFETs

Collaborators (1)

Nadine Collaert

Make your next move.