stephane andrieu

professor

Université de Lorraine

France

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Professor Stéphane Andrieu is a faculty member at Université de Lorraine in France. His research focuses on magnetism, superconductors, and spintronic applications, as evidenced by his recent publications on topics such as strain-induced magnetic moment variations and the engineering of magnetic anisotropy in half-metallic films. He is also involved in investigating the behavior of half-Heusler compounds and the transport properties of Heusler epitaxial thin films.

Articles (12)

Year:

2025

Year:

2024

Year:

2024

Year:

2023

Year:

2023

An all-thin-film approach allows the synthesis of novel two-dimensional quasicrystalline approximants and an atomic scale description is provided based on combined experimental and theoretical investigations.

Year:

2022

Year:

2021

Year:

2021

Year:

2021

Year:

2020

Year:

2020

Year:

2020

Collaborators (6)

Juan-Carlos Rojas-Sánchez

FRANCE

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V. Fournée

FRANCE

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stephane Mangin

Professeur

Université de Lorraine

FRANCE

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Michael Rudolf Koblischka

Saarland University

GERMANY

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Sébastien Petit-Watelot

Associate Professor

Université de Lorraine

FRANCE

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Karine DUMESNIL

Université de Lorraine

FRANCE

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stephane andrieu

Research Interests

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Articles (12)

Strain-induced magnetic moment variations at the picosecond timescale

Magnetic moment of thin film superconductors: When thickness matters

Spin injection at MgB2-superconductor/ferromagnet interface

Engineering of perpendicular magnetic anisotropy in half-metallic magnetic Heusler epitaxial thin films

Testing the topological insulator behavior of half-Heusler PdYBi and PtYBi (111) epitaxial thin films

Two-dimensional square and hexagonal oxide quasicrystal approximants in SrTiO<sub>3</sub> films grown on Pt(111)/Al<sub>2</sub>O<sub>3</sub>(0001)

Nanocontact vortex oscillators based on Co2MnGe pseudo spin valves

Ultrafast strain excitation in highly magnetostrictive terfenol: Experiments and theory

Unveiling transport properties of Co<sub>2</sub>MnSi Heusler epitaxial thin films with ultra-low magnetic damping

Issues in growing Heusler compounds in thin films for spintronic applications

Engineering Co<sub>2</sub>MnAl<sub>x</sub>Si<sub>1−</sub><sub>x</sub> Heusler Compounds as a Model System to Correlate Spin Polarization, Intrinsic Gilbert Damping, and Ultrafast Demagnetization

Epitaxial growth and structure of LaVO3 and PrVO3 thin films

Collaborators (6)

Juan-Carlos Rojas-Sánchez

V. Fournée

stephane Mangin

Michael Rudolf Koblischka

Sébastien Petit-Watelot

Karine DUMESNIL

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