Stephen Pearton

University of Florida

United States

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Articles (21)

The stable beta polymorph Ga 2 O 3 was converted to gamma polymorph by ion irradiation. The current–voltage characteristics show the gamma polymorph is much more rad-hard.

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2023

Collaborators (4)

Adrian Ildefonso

Assistant Professor

Indiana University Bloomington

UNITED STATES

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Honggyu Kim

Assistant Professor

University of Florida

UNITED STATES

View details

Douglas Wolfe

Professor

Pennsylvania State University

UNITED STATES

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Fan Ren

Distinguished Professor

University of Florida

UNITED STATES

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Stephen Pearton

Research Interests

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Articles (21)

Proton damage effects in double polymorph γ/β-Ga<sub>2</sub>O<sub>3</sub> diodes

Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes

The role of carbon capping and Ar pressure on SiC surface degradation during high temperature annealing

Lateral NiO/AlN Heterojunction Rectifiers with Breakdown Voltage >11 kV

Ultra-Low On-Resistance W/β-Ga2O3 Junction Barrier Schottky Rectifiers

Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact

Dry and wet etching of single-crystal AlN

MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes

Switching of kV-class Ga2O3 heterojunction vertical rectifiers

Cathodoluminescence studies of electron injection effects in p-type gallium oxide

Single-Event Transient Study of Ga₂O₃ Rectifiers

60Co γ-irradiation of AlGaN UVC light-emitting diodes

Vertical NiO/β-Ga2O3 rectifiers grown by metalorganic chemical vapor deposition

Annealing Stability of NiO/Ga<sub>2</sub>O<sub>3</sub> Vertical Heterojunction Rectifiers

15 MeV proton damage in NiO/β-Ga2O3 vertical rectifiers

Ion energy dependence of dry etch damage depth in Ga2O3 Schottky rectifiers

1 mm2, 3.6 kV, 4.8 A NiO/Ga2O3 Heterojunction Rectifiers

Classes of O–D centers in unintentionally and Fe-doped β-Ga2O3 annealed in a D2 ambient

Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing

The Optimization of NiO Doping, Thickness, and Extension in kV-Class NiO/Ga2O3 Vertical Rectifiers

Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga2O3 Heterojunction Rectifiers and Ni/Au/Ga2O3 Schottky Rectifiers

Collaborators (4)

Adrian Ildefonso

Honggyu Kim

Douglas Wolfe

Fan Ren

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