Sylwester Bargiel

Silicon-based microchannel technology offers unmatched performance in the cooling of silicon pixel detectors in high-energy physics. Although Si–Si direct bonding, used for the fabrication of cooling plates, also meets the stringent requirements of this application (its high-pressure resistance of ~200 bar, in particular), its use is reported to be a challenging and expensive process. In this study, we evaluated two alternative bonding methods, aiming toward a more cost-effective fabrication process: Si-Glass-Si anodic bonding (AB) with a thin-film glass, and Au-Au thermocompression (TC). The bonding strengths of the two methods were evaluated with destructive pressure burst tests (0–690 bar) on test structures, each made of a 1 × 2 cm2 silicon die etched with a tank and an inlet channel and sealed with a plain silicon die using either the AB or TC bonding. The pressure resistance of the structures was measured to be higher for the TC-sealed samples (max. 690 bar) than for the AB samples (max. 530 bar), but less homogeneous. The failure analysis indicated that the AB structure resistance was limited by the adhesion force of the deposited layers. Nevertheless, both the TC and AB methods provided sufficient bond quality to hold the high pressure required for application in high-energy physics pixel detector cooling.

The stability and accuracy of atomic devices can be degraded by the evolution of their cell inner atmosphere. Hence, the undesired entrance or leakage of background or buffer gas, respectively, that can permeate through the cell walls, should be slowed down. In this work, we investigate helium permeation in microfabricated alkali vapor cells filled with He and whose windows are made of borosilicate glass (BSG) or aluminosilicate glass (ASG). The permeation is then derived from routine measurements of the pressure-shifted hyperfine transition frequency of an atomic clock. We first confirm that ASG reduces the He permeation rate by more than two orders of magnitude, in comparison to BSG. In addition, we demonstrate that Al2O3 thin-film coatings, known to avoid alkali consumption in vapor cells, can also significantly reduce He permeation. The permeation through BSG is thereby reduced by a factor up to 130, whereas the one through ASG is decreased by a factor up to 5.0 compared to uncoated substrates. These results may contribute to the development of miniaturized atomic clocks and sensors with improved long-term stability or sensitivity.