Takahiro Kozawa

Professor

Osaka University

Japan

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About

Dr. Takahiro Kozawa is a Professor at Osaka University in Japan. His research focuses on polymer films for lithography and their dissolution kinetics, including the evaluation of inorganic-organic hybrid resist materials. Recent publications highlight his work on quartz crystal microbalance methods and the synthesis of novel block copolymers for next-generation lithography.

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2025

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2022

Collaborators (4)

Tomoya Nakamura

Associate Professor

Osaka University

JAPAN

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Kyoko Watanabe

Osaka University

JAPAN

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Kota Aoki

Project Associate Professor

Osaka University

JAPAN

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Yuko Ito

Osaka Research Institute of Industrial Science and Technology

JAPAN

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Takahiro Kozawa

Research Interests

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About

Articles (30)

Effects of alkyl chain length of n-alkyl acetates on the dissolution of polymer films for lithography: quartz crystal microbalance method

Dissolution kinetics of polymer films in n-butyl acetate developer investigated by quartz crystal microbalance method

An analytical method for evaluating the transient swelling layer during polymer film development using quartz crystal microbalance

Evaluation of Inorganic-organic Hybrid Resist Materials with Ultrafast Coherent High Harmonic Generation (HHG) EUV System Developed in QST

Effect of organic ligand and metal nanocluster core structure on resist performance of inorganic-organic hybrid resist materials for EUV and EB lithography

Influence of underlayer on development of chemically amplified photoresist film in tetramethylammonium hydroxide (TMAH) aqueous developer

Kinetics of the Oxidation of the [2Fe-2S] Cluster in SoxR by Redox-Active Compounds as Studied by Pulse Radiolysis

Reaction mechanisms of Sn-based polarity-change copolymer resists with different counter anions, designed for extreme ultraviolet lithography

Relationship between the surface free energy of underlayers and the dissolution kinetics of poly(4-hydroxystyrene) partially protected by t-butoxycarbonyl groups in tetramethylammonium hydroxide aqueous developer

Corrigendum: “Relationship between surface free energy and development process (swelling and dissolution kinetics) of poly(4-hydroxystyrene) film in water and 2.38 wt% tetramethylammonium hydroxide aqueous solution” [Jpn. J. Appl. Phys. 61, 016502 (2022)]

Effects of acid generator anions on radiation-induced decomposition and dissolution kinetics of chemically amplified resists

Stratified polymer dissolution model based on impedance data from quartz crystal microbalance method

Dissolution dynamics of partially protected poly(4-hydroxystyrene) in organic developers investigated by a quartz crystal microbalance (QCM) method

Dissolution dynamics of poly(4-hydroxystyrene) partially protected with t-butoxycarbonyl group in alkyltrimethylammonium hydroxide aqueous developers

Effects of substituents in triphenylsulfonium cation on its radiation-induced decomposition and dissolution kinetics of chemically amplified resists

Design strategy of extreme ultraviolet resists

A study on the resist performance of inorganic-organic resist materials for EUV and electron-beam lithography

Dissolution dynamics of poly(4-hydroxystyrene) in potassium hydroxide (KOH) and sodium hydroxide (NaOH) aqueous solutions investigated by quartz crystal microbalance (QCM) method

Synthesis of Polystyrene-block-poly(3-hydroxy-1-methacryloyloxyadamantane) (PS-b-PHAdMA) via RAFT polymerization as candidate block copolymers for next generation lithography

Quartz crystal microbalance analysis of effects of surfactants on dissolution kinetics of poly(4-hydroxystyrene) partially protected by t-butoxycarbonyl group

Analysis of resist images with pattern defects by Hough transform

Defect risks at interfaces of chemically amplified resists in extreme ultraviolet lithography process

Reaction mechanisms of Sn-complex-side-chain polymer used for extreme ultraviolet lithography, studied by electron pulse radiolysis and γ-radiolysis

Classification of dissolution modes of partially protected poly(4-hydroxystyrene) in tetraalkylammonium hydroxide aqueous solutions

Photoresist stochastic defect generation depending on alkyl chain length and concentration of tetraalkylammonium hydroxide in alkali aqueous developer

Dissolution dynamics of partially protected poly(4-hydroxystyrene) in tetraalkylammonium hydroxide aqueous solution

Effects of photoacid generator decomposition on dissolution kinetics of poly(4-hydroxystyrene) in tetraalkylammonium hydroxide aqueous solutions

Protected unit distribution near interfaces of chemically amplified resists used for extreme ultraviolet lithography

Stochastic defect generation depending on tetraalkylhydroxide aqueous developers in extreme ultraviolet lithography

Interfacial effects on sensitization of chemically amplified extreme ultraviolet resists

Collaborators (4)

Tomoya Nakamura

Kyoko Watanabe

Kota Aoki

Yuko Ito

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