Takahisa Omata

Prof.

Tohoku University

Japan

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Professor Takahisa Omata is a faculty member at Tohoku University in Sendai, Japan. His research areas encompass proton conduction in materials, electrical conductivity of n-type semiconductors, and the properties of thin films. Recent articles authored by Professor Omata highlight advancements in materials such as Nb-doped rutile TiO2, MgIn2O4, and the synthesis of quantum dots. His work aims to enhance energy efficiency and material stability for various applications.

Articles (20)

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2025

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2022

Collaborators (6)

Hiroshi Yanagi

JAPAN

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Issei Suzuki

Tohoku University

JAPAN

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Kiyohisa TANAKA

准教授/Associate Professor

分子科学研究所/Institute for Molecular Science

JAPAN

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Tomohiro Ishiyama

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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ARUNKUMAR DORAI

Associate Professor

Tohoku University

JAPAN

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Sakiko Kawanishi

Kyoto University

JAPAN

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Takahisa Omata

Research Interests

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About

Articles (20)

Role of hydrogen in the n-type oxide semiconductor MgIn2O4: Experimental observation of electrical conductivity and first-principles insight

Non-stoichiometry in SnS: How it affects thin-film morphology and electrical properties

Unconventional and Powerful Ion Sources for Solid-State Ion Exchange, Cu2SO4 and Cu3PO4: Exemplified by the Synthesis of Metastable β-CuGaO2 from Stable β-LiGaO2

Effects of Process Gas Pressure on Properties of WO3 Thin Films Deposited by RF Sputtering

Enhancing Proton Mobility in Silicophosphoric Acid by Replacing Si with Al

Enhanced Proton Transport in Nb-Doped Rutile TiO2: A Highly Useful Class of Proton-Conducting Mixed Ionic Electronic Conductors

Design of low-lattice-mismatch type-I heterostructures of zinc chalcogenide and synthesis of ZnTeS quantum dots as key materials for realizing green and red emission

Replacing Sodium Ions with Protons in Vanadophosphate Glass: Suppression of Electronic Conduction by Local Structural Change around Vanadium Ions

(Invited) Improving the Stability and Transport Properties of a High Concentration of Protons in Phosphate Glass at Intermediate Temperatures

Mixed Protonic and Electronic Conduction in N-Type Oxide Semiconductor MgIn2O4 Under Hydrogen Atmosphere

High open-circuit voltage in single-crystalline n-type SnS/MoO3 photovoltaics

Enhancing proton mobility and thermal stability in phosphate glasses with WO3: the mixed glass former effect in proton conducting glasses

Site-Dependent Luminescence from Pr3+ in Double-Perovskite-Type Alkaline Earth Lanthanum Tantalates

Avoiding Fermi Level Pinning at the SnS Interface for High Open-Circuit Voltage

Current status of n-type SnS: paving the way for SnS homojunction solar cells

Phase Transformation of Metastable Cu2ZnGeO4 with a Wurtz–Kesterite Structure at Elevated Temperatures

Contribution of the Sn 5s state to the SnS valence band: direct observation via ARPES measurements

Growth of β-NaGaO2 thin films using ultrasonic spray pyrolysis

Visualization of polysulfide dissolution in lithium-sulfur batteries using in-situ NMR microimaging

Site-Dependent Tb3+ Luminescence by Energy Transfer from Ce3+ in Ce3+–Tb3+ Codoped LaLuO3

Collaborators (6)

Hiroshi Yanagi

Issei Suzuki

Kiyohisa TANAKA

Tomohiro Ishiyama

ARUNKUMAR DORAI

Sakiko Kawanishi

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