Tetsuya Suemitsu

Professor

Tohoku University

Japan

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Professor Tetsuya Suemitsu is a faculty member at Tohoku University, Japan. His research focuses on terahertz detection, high electron mobility transistors (HEMT), and plasmonic metamaterials, as evidenced by his recent publications on photonic and terahertz devices. Professor Suemitsu's work advances the understanding of high-speed optical and terahertz signal processing technologies.

Articles (12)

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2024

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2024

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2023

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2023

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2022

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2022

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2022

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2022

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2022

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2021

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2020

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2020

Collaborators (2)

Akira Satou

JAPAN

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Taiichi Otsuji

Professor

Tohoku University

JAPAN

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Tetsuya Suemitsu

Research Interests

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Articles (12)

300-GHz-Band Operation of UTC-PD-Integrated HEMT Photonic Double-Mixer

Photoresponse Linearity and Speed of an InP-Based Asymmetric-Dual-Grating-Gate HEMT Plasmonic Detector with Respect to Incident THz Radiation Intensity

Gate-readout and a 3D rectification effect for giant responsivity enhancement of asymmetric dual-grating-gate plasmonic terahertz detectors

Utilizing High-Intensity Optical Subcarrier Signal for Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer

Fast and sensitive terahertz detection with a current-driven epitaxial-graphene asymmetric dual-grating-gate field-effect transistor structure

Reverse bias annealing effects in N-polar GaN/AlGaN metal-insulator-semiconductor high electron mobility transistors

Graphene-based plasmonic metamaterial for terahertz laser transistors

Pulse Response of Asymmetric Dual-Grating-Gate HEMT Plasmonic THz Detector

UTC-PD-Integrated HEMT for Optical-to-MMW/THz Carrier Frequency Down-Conversion: Scaling Rule of Conversion Gain on UTC-PD Mesa Size

Unitraveling-Carrier-Photodiode-Integrated High-Electron-Mobility Transistor for Photonic Double-Mixing

Effective Schottky Barrier Height Model for N‐Polar and Ga‐Polar GaN by Polarization‐Induced Surface Charges with Finite Thickness

Effective Schottky Barrier Height Model for N-Polar and Ga-Polar GaN by Polarization-Induced Surface Charges with Finite Thickness

Collaborators (2)

Akira Satou

Taiichi Otsuji

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