Thierry Baron

CNRS en Alpes

France

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Articles (14)

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2025

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2025

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2024

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2023

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2020

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2020

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2020

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2020

Collaborators (4)

Juan Jimenez

Full Professor

Universidad de Valladolid

SPAIN

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Franck BASSANI

CNRS en Alpes

FRANCE

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Huiyun Liu

University College London

UNITED KINGDOM

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Jean-Marie Nedelec

Université Clermont Auvergne

FRANCE

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Thierry Baron

Research Interests

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Articles (14)

Study of In0.53Ga0.47As/InP interface in III–V heterostructures by coupling monoatomic argon sputtering and high-energy x-ray photoelectron spectroscopy

Study of zinc doped In0.53Ga0.47As/InP/InAlAs/InP heterostructures by time-of-flight; magnetic secondary ion spectrometry and high-energy x-ray photoelectron spectroscopy

Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon

InGaAs/GaAsP Superlattice Resonant Cavity-Enhanced Photodetector Fabricated on a Nominal Si(001) Substrate for Near- and Short-Wavelength Infrared Applications

Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing

Monolithically Integrated Ultralow Threshold Topological Corner State Nanolasers on Silicon

Towards Wireless Detection of Surface Modification of Silicon Nanowires by an RF Approach

Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate

Gallium Selenide Nanoribbons on Silicon Substrates for Photodetection

3D field confinement in the near-field interaction between graphene and Si/SiGe axially heterostructured NWs

O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

A fabrication process for self-connected horizontal SiGe nanowires

Comparison of AlGaInAs-Based Laser Behavior Grown on Hybrid InP-SiO/Si and InP Substrates

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Collaborators (4)

Juan Jimenez

Franck BASSANI

Huiyun Liu

Jean-Marie Nedelec

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