Tomoyoshi Mishima

Has grant

Hosei University

Japan

Research Interests

Explore related searches

Professors in Japan

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

Recent Grants

Grant: Close

未来のあるべき社会・ライフスタイルを創造する技術イノベーション事業

Open Date: 2014-04-01

Close Date: 2022-03-01

Articles (19)

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2024

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Collaborators (2)

Tomoaki Nishimura

Professor

Hosei University

JAPAN

View details

Hiroshi Ohta

Hosei University

JAPAN

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Tomoyoshi Mishima

Research Interests

Explore related searches

Contact this professor

Recent Grants

Articles (19)

Estimation of surface diffusion length of Ga adatoms from composition and step-height of AlGaN layers grown by metalorganic vapor-phase epitaxy on misoriented substrates

6 kV GaN p–n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma

Distance reduction factor in the modified El-Hoshy−Gibbons model determined as a function of Kohn−Sham radii of low-velocity projectiles and impact parameters of targets for small-angle collisions

Analytical modeling of atomic-number-dependent electronic stopping cross sections in Si, C, 4H-SiC, Al, Ni, and Ag

An explanation of reported dependence of backward diffusion of Zn in (100) InP on misorientation directions by relating kink velocities to Zn incorporation sites during metalorganic vapor-phase epitaxy

Comparison of electronic stopping powers of 4H-SiC and 2H-GaN for low-velocity 〈0001〉 channeled ions with atomic numbers of 12 to 15

Modified El-Hoshy−Gibbons model for electronic stopping cross sections in Si and SiC for low-velocity ions with atomic numbers between 5 and 15

Comparison of electronic stopping cross sections for channeled implantation of Al ions between the 〈0001〉 and 〈11 2¯ 3〉 directions in 4H-SiC

Estimation of electronic stopping cross sections of 4H-SiC for 2–26 MeV Al random-ion implantations

Analysis of reported substrate-misorientation and growth-temperature dependences of alloy composition in metalorganic vapor-phase epitaxially grown c-plane InGaN

Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy

Evaluation of critical supersaturation ratios during epitaxial growth of hexagonal SiC {0001} under carbon- and hydrogen-rich conditions

Estimation of supersaturation at steps during chemical vapor deposition of 4H-SiC ( 0001¯ ) from reported growth rate and cross-sectional profile of spiral hillock

Re-evaluation of energy dependence of electronic stopping cross-section for Al ions into 4H-SiC (0001)

An extraction method for areal forward current/voltage characteristics of circular GaN p+n diodes

Analysis of relaxation time for nitrogen-containing species to enter steps on misoriented (0001) surfaces during homoepitaxial growth of 4H-SiC

Impact on on-resistance of p-n junction diodes by using heavily Ge-doped GaN substrate

Mapping of contactless photoelectrochemical etched GaN Schottky contacts using scanning internal photoemission microscopy—difference in electrolytes

No significant contribution of hole-trap-enhanced conductivity modulation in GaN p+n diodes formed on low-dislocation-density GaN substrates

Collaborators (2)

Tomoaki Nishimura

Hiroshi Ohta

Make your next move.