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Udayan Ganguly

Associate Professor

Indian Institute of Technology, Bombay

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Articles (20)

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2023

Collaborators (4)

Maryam Shojaei Baghini

Professor

Indian Institute of Technology, Bombay

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Laxmeesha Somappa

Assistant Professor

Indian Institute of Technology, Bombay

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Rakesh Mote

Professor

Indian Institute of Technology, Bombay

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Veeresh Vidyadhar Deshpande

Associate Professor

Indian Institute of Technology, Bombay

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Udayan Ganguly

Research Interests

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Articles (20)

Plasma-Engineered Au/TiOx/Ti Memristive Synapses Enabling Forming-Free Operation and Highly Tunable Multifunctional Bio-Inspired Synaptic Plasticity

Design Space and Variability Analysis of SOI MOSFET for Ultralow-Power Band-to-Band Tunneling Neurons

High Remnant Polarization (2Pr > 65 μ C/cm2) in Sputtered HfxZr1- xOy Thin Films

Heracles: A HfO2 Ferroelectric Capacitor Compact Model for Efficient Circuit Simulations

One-Time Programmable Memory for Ultra-Low Power ANN Inference Accelerator With Security Against Thermal Fault Injection

A 42.3 μm² Band to Band Tunneling-Based Oscillator Enabled Temperature to Digital Converter With Resolution FoM of 0.16 pJK² for Embedded Temperature Sensing

Area and Energy-Efficient Quantum Tunneling-Based Thermal Sensor on 45nm RFSOI Technology

Engineering wafer scale single-crystalline Si growth on epitaxial Gd2O3/Si(111) substrate using radio frequency sputtering for silicon on insulator application

Low Voltage NIPIN Symmetric and Bi-Directional Diode for System Level ESD Protection

Process-Voltage-Temperature Variability Estimation of Tunneling Current for Band-to-Band-Tunneling-Based Neuron

FeFET-Based MirrorBit Cell for High-Density NVM Storage

Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for the TCAM, Storage, and In-Memory Computing Applications

Relevance of Hidden Transients in the Steady State Memristor Measurements

A Compact and Ultra-Low-Power Low-Pass Filter Based on Band-to-Band Tunneling Effect

Enhanced regularization for on-chip training using analog and temporary memory weights

Phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application

Evolution of Ferroelectricity With Annealing Temperature and Thickness in Sputter Deposited Undoped HfO2 on Silicon

Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2Pr > 70 μC/cm2) in Hf0.5Zr0.5O2 Thin Films

Integration of Non-Filamentary Pr0.7Ca0.3MnO3– Based Memristor With Silicon-PN Junction

Robustness to Variability and Asymmetry of In-Memory On-Chip Training

Collaborators (4)

Maryam Shojaei Baghini

Laxmeesha Somappa

Rakesh Mote

Veeresh Vidyadhar Deshpande

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