Valeri Afanasiev

professor

KU Leuven

Belgium

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Valeri Afanasiev is a professor at KU Leuven, Belgium. His research areas include dielectric materials in electronics, focusing on topics such as trap density extraction in Al:HfO2 capacitors, trap-assisted tunneling in metal-insulator-metal structures, and the electronic properties of 2D materials like MoS2. His recent work also encompasses studies on ferroelectric switching in IGZO channels and the impact of CVD chemistry on band alignment at interfaces.

Articles (10)

Year:

2025

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2025

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2025

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2025

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2024

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2024

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2024

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2024

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2024

Year:

2023

Collaborators (1)

Alexander Shluger

University College London

UNITED KINGDOM

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Valeri Afanasiev

Research Interests

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Articles (10)

Extraction of trap densities in Al:HfO2 MIM capacitors using voltage ramp stress measurements

Multi-step trap-assisted tunneling in Al-doped HfO2 used in advanced 2.5D metal–insulator–metal capacitors

Energy band alignment in MoS2/HfO2: Transfer-related artifacts and interfacial effects

Understanding the Slow Erase Operation in IGZO-Channel FeFETs: The Role of Positive Charge Generation Kinetics

Electron emission from deep traps in HfO2 under thermal and optical excitation

A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs

Experimental study of time-dependent dielectric degradation by means of random telegraph noise spectroscopy

Voltage ramp stress based lifetime-prediction model of advanced Al-doped HfO2 dielectric for 2.5D MIMCAPs

Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor

Impact of CVD chemistry on band alignment at the MoS2/SiO2 interface

Collaborators (1)

Alexander Shluger

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