Vincent Chan

With the development of nanotechnology, fluorescent silicon nanomaterials have been synthesized and applied in various areas. Among them, silicon quantum dots (SiQDs) are a new class of zero-dimensional nanomaterials with outstanding optical properties, benign biocompatibility, and ultra-small size. In recent years, SiQDs have been gradually utilized for constructing high-performance fluorescent sensors for chemical or biological analytes. Herein, we focus on reviewing recent advances in SiQD-based fluorescent biosensors from a broad perspective and discussing possible future trends. First, the representative progress for synthesizing water-soluble SiQDs in the past decade is systematically summarized. Then, the latest achievement of the design and fabrication of SiQD-based fluorescent biosensors is introduced, with a particular focus on analyte-induced photoluminescence (fluorescence) changes, hybrids of SiQDs with other materials or molecules, and biological ligand-modification methods. Finally, the current challenges and prospects of this field are highlighted.

A novel piezoresistive sensor based on ultralight 3D MXene scaffold (3DMS) is developed by a facile and architecturally versatile method using additively manufactured, polymer‐based gyroidal triply periodic minimal surface (TPMS) as the initial sacrificial scaffold. A neat MXene scaffold with the gyroidal TPMS structure is prepared by dip coating MXene sheets onto 3D‐printed polymeric Gyroid lattices, followed by thermal treatment. 3DMS exhibits a high compressive strength of 27.18 kPa and a thermal conductivity of 0.3454 W m −1 K −1 . The thermal conductivity of the MXene layer in the 3D structure can reach up to 23.88 Wm −1 K −1 , which demonstrates that 3DMS has high versatility for all‐in‐one applications, such as thermal insulation, sensors, and energy storage. The 3DMS developed herein combines the high electrical conductivity of MXene (Ti 3 C 2 T x ), intricacy of the gyroidal structure, as well as high porosity, offering a promising platform for high‐performance sensors. In addition, the piezoresistive sensor shows extremely high sensitivity (134.48 kPa −1 ), good response time (477 ms) and recovery time (402 ms), and improvable durability, validating its potentials for measuring pressure distribution in various engineering devices.