Vladimir Mitin

SUNY Distinguished Professor

University at Buffalo

United States

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Vladimir Mitin is a SUNY Distinguished Professor at the University at Buffalo, USA. His research primarily focuses on terahertz detectors, graphene field-effect transistors, and the effects of plasmonic resonances. Recent publications include studies on hot-electron bolometric detectors and resonant plasmonic detection, contributing significantly to advancements in terahertz technology.

Articles (13)

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2024

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2024

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2024

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2023

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2023

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2022

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2022

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2022

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2021

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2021

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2021

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2021

Collaborators (4)

Michael S. Shur

Rensselaer Polytechnic Institute

UNITED STATES

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M. S. Shur

UNITED STATES

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Taiichi Otsuji

Professor

Tohoku University

JAPAN

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Maxim Ryzhii

University of Aizu

JAPAN

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Vladimir Mitin

Research Interests

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Articles (13)

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: Effect of electron cooling in channel and at side contacts

Temperature Dependence of Hot-Electron Graphene Fet Bolometric Detectors Response to Modulated Terahertz Radiation

Phase- and Angle-Sensitive Terahertz Hot-Electron Bolometric Plasmonic Detectors Based on Fets with Graphene Channel and Composite H-BN/Black-P/H-BN Gate Layer

Terahertz bolometric detectors based on graphene field-effect transistors with the composite h-BN/black-P/h-BN gate layers using plasmonic resonances

Micromechanical field-effect transistor terahertz detectors with optical interferometric readout

Effect of Electron Thermal Conductivity on Resonant Plasmonic Detection in Terahertz Hot-Electron Bolometers Based on Metal/Black-AsP/Graphene FETs

Transit-time resonances enabling amplification and generation of terahertz radiation in periodic graphene p-i-n structures with the Zener–Klein interband tunneling

Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection

Resonant Plasmonic Terahertz Detection in Gated Graphene p - i - n Field-Effect Structures Enabled by Nonlinearity from Zener-Klein Tunneling

Coulomb drag by injected ballistic carriers in graphene n+−i−n−n+ structures: doping and temperature effects

Effect of Coulomb Carrier Drag and Terahertz Plasma Instability in p+ - p - i - n - n+ Graphene Tunneling Transistor Structures

Coulomb Drag by Injected Ballistic Carriers in Graphene n+−i−n−n+ Structures: Doping and Temperature Effects

Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection

Collaborators (4)

Michael S. Shur

M. S. Shur

Taiichi Otsuji

Maxim Ryzhii

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