Walter Lambrecht

Professor

Case Western Reserve University

United States

Research Interests

Explore related searches

Professors in United States

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

About

Professor Walter Lambrecht is a faculty member at Case Western Reserve University in the United States. His research focuses on various aspects of material science, including optical absorption, electronic structure, and excitonic properties in complex materials. Recent publications explore topics such as the optical characteristics of V2O5, band structure in wide-band-gap semiconductors, and the deposition of MgGeN2 films.

Articles (20)

Year:

2025

Year:

2025

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Collaborators (4)

Kathleen Kash

Professor

Case Western Reserve University

UNITED STATES

View details

Martin Feneberg

Otto-von-Guericke Universität Magdeburg

GERMANY

View details

André Schleife

UNITED STATES

View details

Rüdiger Goldhahn

Otto-von-Guericke Universität Magdeburg

GERMANY

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Walter Lambrecht

Research Interests

Explore related searches

Contact this professor

About

Articles (20)

Optical absorption and luminescence of α−LiV2O5 from the Bethe-Salpeter equation

Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire

Author Correction: Delocalization of dark and bright excitons in flat-band materials and the optical properties of V2O5

Quasiparticle band structure and excitonic optical response in V2O5 bulk and monolayer

Native defects and their complexes in spinel LiGa5O8

Electronic structure and magnetism in P4/nmm KCoO2

Band structure and excitonic properties of WSe2 in the isolated monolayer limit in an all-electron approach

Comparison of interband related optical transitions and excitons in ZnGeN2 and GaN

Spinel LiGa5O8 prospects as ultra-wideband-gap semiconductor: Band structure, optical properties, and doping

Computational study of defect complexes in β-LiGaO2 and their relation to the donor–acceptor-pair recombination

Improved quasiparticle self-consistent electronic band structure and excitons in β−LiGaO2

Robustness of electronic screening effects in electron spectroscopies: Example of V2O5

Comment on “Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping” by W. Lin, J. Kang et al., Phys. Chem. Chem. Phys., 2022, 24, 5529

Erratum: Optical response and band structure of LiCoO2 including electron-hole interaction effects [Phys. Rev. B 104 , 115120 (2021)]

Quaternary <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">MgSiN</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> -GaN alloy semiconductors for deep UV applications

Calculated electron paramagnetic resonance g tensor and hyperfine parameters for zinc vacancy and N related defects in ZnO

Quasiparticle self-consistent GW band structures and phase transitions of LiAlO2 in tetrahedrally and octahedrally coordinated structures

Real-space representation of the quasiparticle self-consistent GW self-energy and its application to defect calculations

Delocalization of dark and bright excitons in flat-band materials and the optical properties of V2O5

N2, NO, and O2 molecules in LiGaO2 in both Ga and Li sites and their relation to the vacancies

Collaborators (4)

Kathleen Kash

Martin Feneberg

André Schleife

Rüdiger Goldhahn

Make your next move.